Optical studies of self-trapped excitons in SiO2

Itoh, Chihiro; Tanimura, Katsumi; Itoh, Noriaki

doi:10.1088/0022-3719/21/26/017

Cited by 161 publications

(83 citation statements)

References 11 publications

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“…The crystalline sample shows an emission with the peak around 450 nm while the glass sample shows a much broader band emission 300500 nm. A similar emission in c-SiO 2 was reported to be due to a self-trapped exciton (STE) 15) whereas the broader emission feature of RL seen in the glass sample suggests that it has supplemental luminescent centres in comparison with the crystalline sample. These centres can be structural defects due to the nature of glass, oxygen vacancies as the sample was synthesized in a strong vacuum environment and/or some contaminations such as carbon from the die and punches used in SPS.…”

Section: Resultssupporting

confidence: 57%

Radioluminescence and thermally-stimulated luminescence of SiO2 glasses prepared by spark plasma sintering

Okada

Kasap

Yanagida

2016

J. Ceram. Soc. Japan

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Bulk SiO 2 glasses have been prepared by spark plasma sintering and characterized towards dosimeter applications. The temperature dependence studies of radioluminescence suggest that there are two possible groups of luminescent centres, which show emissions at 385 and 511 nm. At room temperature, the former emission is predominant while the latter emission significantly increases at low temperatures, especially below 200 K. The origins of these emissions are attributed to a pair of silylene centres and dioxasilirane and silylene, respectively. After irradiating the sample, thermally-stimulated luminescence (TSL) is observed around 160°C and above 300°C, in which the emission is mainly the 385 nm component. The TSL intensity is linearly proportional to the radiation dose delivered, and a linear dynamic range has been demonstrated over 10 0 10 4 mGy.

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Section: Resultssupporting

confidence: 57%

Radioluminescence and thermally-stimulated luminescence of SiO2 glasses prepared by spark plasma sintering

Okada

Kasap

Yanagida

2016

J. Ceram. Soc. Japan

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“…The role of the chemistry in laser-induced structural glass modification was addressed in many studies [52][53][54][55][56][57][79][80][81][82]. Several experimental works reported the presence of color centers [53,55], voids [57,80], and oxygen [52,81] in laser-ablated glasses and also self-trapped excitons [71,79], which influence energy transport and lattice defect formation [31,32].…”

Section: Numerical Modelmentioning

confidence: 99%

From random inhomogeneities to periodic nanostructures induced in bulk silica by ultrashort laser

2016

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Femtosecond laser-induced volume nanograting formation is numerically investigated. The developed model solves nonlinear Maxwell's equations coupled with multiple rate free carrier density equations in the presence of randomly distributed inhomogeneities in fused silica. As a result of the performed calculations, conduction band electron density is shown to form nanoplanes elongated perpendicular to the laser polarization. Two types of nanoplanes are identified. The structures of the first type have a characteristic period of the laser wavelength in glass and are attributed to the interference of the incident and the inhomogeneity-scattered light waves. Field components induced by coherent multiple scattering in directions perpendicular to the laser polarization are shown to be responsible for the formation of the second type of structures with a subwavelength periodicity. In this case, the influence of the inhomogeneity concentration on the period of nanoplanes is shown. The calculation results not only help to identify the physical origin of the self-organized nanogratings, but also explain their period and orientation.

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“…From the literature an energy of 4.6 eV and 5.6 eV are commonly associated to ω trSi for amorphous pure silica. 31,34 In the case of Ge-doped silica we found a transient absorption band related to a STE at an energy of 4.1 eV associated to ω trGe . 34 Practically, we will consider in each case only the dominant term, i.e., the one which is the closest to resonant transitions for our probe wavelengths.…”

Section: -5mentioning

confidence: 79%

Time-resolved plasma measurements in Ge-doped silica exposed to infrared femtosecond laser

et al. 2011

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Lancry, M., Groothoff, N., Poumellec, B., Guizard, S., Fedorov, N., & Canning, J. (2011). Time-resolved plasma measurements in Ge-doped silica exposed to infrared femtosecond laser. Physical Review B: Condensed Matter, 84(24), 245103-1/8. DOI: 10.1103/PhysRevB.84.245103 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Using a time-resolved interferometric technique, we study the laser-induced carrier-trapping dynamics in SiO 2 and Ge-doped SiO 2 . The fast trapping of electrons in the band gap is associated with the formation of self-trapped excitons (STE). The STE trapping is doping dependent in SiO 2 . The mean trapping time of electrons excited in the conduction band was found to be significantly lower in Ge-doped silica (75 ± 5 fs) when compared to pure silica (155 ± 5 fs). At our concentration level, this indicates that the plasma properties are determined by the presence of easily ionizable states such as the presence of Ge atoms in the glass network. Therefore, we suggest that in Ge-doped silica there exist an additional trapping pathway that leads to a significantly faster excitons trapping and a higher plasma density when compared to undoped silica.

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Optical studies of self-trapped excitons in SiO₂

Cited by 161 publications

References 11 publications

Radioluminescence and thermally-stimulated luminescence of SiO<sub>2</sub> glasses prepared by spark plasma sintering

Radioluminescence and thermally-stimulated luminescence of SiO<sub>2</sub> glasses prepared by spark plasma sintering

From random inhomogeneities to periodic nanostructures induced in bulk silica by ultrashort laser

Time-resolved plasma measurements in Ge-doped silica exposed to infrared femtosecond laser

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