Optical studies of SnTexSe1−x sintered films

Saini, Ravindra Kumar; Kumar, R.; Jain, Garima

doi:10.1016/j.optmat.2009.08.009

Cited by 15 publications

(6 citation statements)

References 15 publications

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“…There are a few reports on TE properties of SnSe-based solid solutions [21,22,23,24,25,26]. Han et al, [21] investigated the TE properties of SnS 1−x Se x solid solutions and reported that a ZT of ~0.82 in SnS 0.2 Se 0.8 , which was more than four times higher than that of SnS, was achieved by the increase of carrier mobility and the reduction of lattice thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution

et al. 2019

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SnSe is considered as a promising thermoelectric (TE) material since the discovery of the record figure of merit (ZT) of 2.6 at 926 K in single crystal SnSe. It is, however, difficult to use single crystal SnSe for practical applications due to the poor mechanical properties and the difficulty and cost of fabricating a single crystal. It is highly desirable to improve the properties of polycrystalline SnSe whose TE properties are still not near to that of single crystal SnSe. In this study, in order to control the TE properties of polycrystalline SnSe, polycrystalline SnSe–SnTe solid solutions were fabricated, and the effect of the solid solution on the electrical transport and TE properties was investigated. The SnSe1−xTex samples were fabricated using mechanical alloying and spark plasma sintering. X-ray diffraction (XRD) analyses revealed that the solubility limit of Te in SnSe1−xTex is somewhere between x = 0.3 and 0.5. With increasing Te content, the electrical conductivity was increased due to the increase of carrier concentration, while the lattice thermal conductivity was suppressed by the increased amount of phonon scattering. The change of carrier concentration and electrical conductivity is explained using the measured band gap energy and the calculated band structure. The change of thermal conductivity is explained using the change of lattice thermal conductivity from the increased amount of phonon scattering at the point defect sites. A ZT of ~0.78 was obtained at 823 K from SnSe0.7Te0.3, which is an ~11% improvement compared to that of SnSe.

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Section: Introductionmentioning

confidence: 99%

Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution

et al. 2019

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“…They are widely used in optical recording media because of their excellent laser writer sensitivity [23,24]. Amorphous Se (a-Se) has several disadvantages in practical applications such as small sensitivity and thermal stability but which can be improved by alloying with gallium (Ga) and enhanced the stability of materials [23]. In this work, we present the photo-induced effects on structural, optical and electrical properties of Ga 10 Se 78 Tl 12 thin films.…”

Section: Introductionmentioning

confidence: 99%

A study on photo-induced crystallization in Ga10Se78Tl12 thin films

Tripathi

Akhtar

Alvi

et al. 2015

J Mater Sci: Mater Electron

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This paper reports the photo-induced crystallization in glassy Ga 10 Se 78 Tl 12 thin films. The glassy nature of the bulk material was confirmed by non-isothermal differential scanning calorimetry measurements. The photo-induced crystallization in Ga 10 Se 78 Tl 12 films was done by exposing to light (using 2000 W tungsten lamp) at various illumination times under the fixed ambient temperature at 358 K. Virgin and photo-induced Ga 10 Se 78 Tl 1 thin films were characterized by X-rays diffraction, scanning electron microscopy, optical and electrical measurements. The photo-induced crystallization is associated to the change in structure of Ga 10 Se 78 Tl 12 thin films which initiated the significant change in the optical constants. The detailed examination of the optical absorption results indicated that the optical transition was indirect. The optical band gap of Ga 10 Se 78 Tl 12 thin films were decreased while the absorption and the extinction coefficients increased with the increase of illumination time. From dark conductivity results, the dark conductivities of thin films continuously heightened and the activation energy turned to be lower as increasing the illumination time. The lowering in optical band gap and activation energy might be due to the occurrence of photo crystallization with the increment of illumination time.

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“…Ahmad et al [23] has studied the electrical and optical properties of Sn 10 Sb 20À x Bi x Se 70 glassy films; Afifi et al [24] has studied the electrical and switching properties of the Se 90 Te 10À x Ag x films. The work on incorporation of Bi, Cd and Zn on the optical properties of Ge 20 Se 80 thin films by Aly et al [25], optical and structural properties of Ge-Se bulk glasses and Ag-Ge-Se thin films by Orava et al [26], optical properties and scanning probe microscopy study of some Ag-As-S-Se amorphous films by Knotek et al [27] and optical studies of SnTe x Se 1À x sintered films by Saini et al [28] are also worth mentioning.…”

Section: Introductionmentioning

confidence: 99%

“…Ge based chalcogenide glasses receive attention from their potential use in various solid state devices. Glassy alloys based on selenium have become materials of considerable commercial importance and are widely used for optical recording media because of their excellent laser writer sensitivity [28,29], but these advantages depend on material stability [28]. The change in the electrical transport properties of some chalcogenides is attributed to a corresponding change in thallium content [30][31][32][33].…”

Section: Introductionmentioning

confidence: 99%

Influence of composition on electrical and optical properties of new chalcogenide thin films from Ge–Se–Tl system

Al-Agel¹

2011

Optics & Laser Technology

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Optical studies of SnTexSe1−x sintered films

Cited by 15 publications

References 15 publications

Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution

Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution

A study on photo-induced crystallization in Ga10Se78Tl12 thin films

Influence of composition on electrical and optical properties of new chalcogenide thin films from Ge–Se–Tl system

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