Optical study of a polymeric LED with a nano-sized electrode realized by a modified SNOM setup

Micheletto, Ruggero; Yoshimatsu, Nobuki; Yokokawa, Miwa; An, Taekyung; Lee, Haiwon; Okazaki, Satoshi

doi:10.1016/s0030-4018(01)01393-1

Cited by 6 publications

(3 citation statements)

References 17 publications

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“…These modes could be arising from self-assembled cavities formed in the polymer film due to recurrent light scattering [10] by domain boundaries. Small (10 -20 nm) structures in a fractal-like organization and elongated self-assembled aggregates of these structures forming extended domains (100 -2000 nm) have been previously demonstrated in these polymer films using scanning tunnelling microscopy and near-field optical measurements [11]. It was shown that these structures are the source of the electroluminescence emission pattern which were observed due to domain boundaries scattering.…”

Section: Resultsmentioning

confidence: 77%

Electron beam induced light emission from the polythiophene derivative/ITO structure

Panin

Kang

Lee

2004

Physica Status Solidi (b)

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Light emission from a poly-[3-(2-benzotriazolo)-ethylthiophene]/indium tin oxide (PBET/ITO) structure under electron beam excitation was investigated. Two peaks at 580 nm (green) and 620 nm (orange) are observed under low excitation. An ultraviolet (UV) emission centered at 347 nm appeared under high current excitation. The ratio of the UV/green-orange band intensities increases with an increase of the current density and with a decrease of temperature. Stimulated emission and lasing from the polythiophene derivative structure are observed at high current density.

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Section: Resultsmentioning

confidence: 77%

Electron beam induced light emission from the polythiophene derivative/ITO structure

Panin

Kang

Lee

2004

Physica Status Solidi (b)

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“…3,4 For this purpose, heteronanostructures on Si substrates emitting 1.54 lm light, such as, Ge, 5 GeSn, 6 silicides, 7 Er 2 SiO 5 , 8,9 and their array arrangements, 10 were extensively investigated. Active regions of LEDs/LDs do not agree with light-emitting regions in measurements of PL, CL, and probe-assisted local EL like optical fiber SPM probes, 17,18 which results in disagreements of each peak's wavelength and relative intensity. However, luminescence spectra are usually dependent not only probingdepth (depth-dependent properties of light-emission and reabsorption) but also carrier excitation density.…”

Section: Introductionmentioning

confidence: 99%

Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure

Watanabe

Nakamura

Kuboya

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inScanning tunneling microscope-cathodoluminescence measurement of the GaAs/AlGaAs heterostructure J.Local characterization of electroluminescence (EL) from working light-emitting devices is a key to developing and improving their EL properties. The authors developed a scanning tunneling microscope-(STM-) EL technique based on conductive optical fiber probe STM with homemade bipolar sample holder and we demonstrated spatially resolved STM-EL nanospectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure (110) cross-sections. The lateral spatial resolution of the STM-EL measurement was evaluated to be about 0.9 lm, whose origin was attributed to far-field EL collection by the tapered core of the optical fiber probe. This lateral spatial resolution agrees with the estimated spatial resolution of 1.1 lm in lateral and 1.2 lm in depth.

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“…The fiber probe used for our study is shaped by chemical etching. The etching solution is mixed in this volume ratio: HF(50%):NH 4 F(40%):H 2 O = 1:2:1 [14,15]. All measurements were performed at room temperature.…”

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confidence: 99%

Real-time near-field evidence of optical blinking in the photoluminescence of InGaN by scanning near-field optical microscope

Oikawa¹,

Feldmeier²,

Schwarz³

et al. 2011

Opt. Mater. Express

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InGaN/GaN devices are currently used for many applications, for example, full color display, white (RGB) illumination systems and for the realization of shorter wavelength emitters for optical data storage. We previously reported a blinking phenomenon in the photo-luminescence of InGaN device ready single quantum well materials. In this study we observe in high resolution this optical instability with a near-field nano-probe. The phenomenon appears only in local confined domains and does not seem to behave as a bistable state process like reported on quantum dots generated photo-luminescence. We investigated by a modified scanning near-field optical microscope (SNOM) and studied the time/intensity profile of the optical signal with a resolution in the range of 100nm. The dynamics of the blinking was time-resolved and its behaviour studied with Fourier analysis. Despite the intensity oscillations were found to have chaotic component (autocorrelation coefficient is about 0.63), the optical oscillations appear to include regular characteristics. Fourier analysis of the light intensity from confined domains exhibit peaks in the range of 4-5 s. The emergence of these intriguingly slow and partially regular dynamics should shed light on the inner mechanism that are involved in the fundamental processes of optical emission in these devices

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Optical study of a polymeric LED with a nano-sized electrode realized by a modified SNOM setup

Cited by 6 publications

References 17 publications

Electron beam induced light emission from the polythiophene derivative/ITO structure

Electron beam induced light emission from the polythiophene derivative/ITO structure

Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure

Real-time near-field evidence of optical blinking in the photoluminescence of InGaN by scanning near-field optical microscope

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