Optical study of disorder and defects in hydrogenated amorphous silicon carbon alloys

Nguyen-Tran, Th.; Suendo, Veinardi; Cabarrocas, Pere Roca i

doi:10.1063/1.1968413

Cited by 12 publications

(4 citation statements)

References 12 publications

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“…Hydrogenated amorphous silicon carbide films are generally deposited by capacitively coupled rf (13.56 MHz) plasma enhanced chemical vapour deposition (CVD) [7][8][9], electron cyclotron resonance CVD [10,11], hot wire CVD [12,13] and magnetron sputtering [14,15]. Whilst the use of reactive (e.g.…”

Section: Introductionmentioning

confidence: 99%

High-rate, low-temperature synthesis of composition controlled hydrogenated amorphous silicon carbide films in low-frequency inductively coupled plasmas

Cheng

Long

et al. 2008

J. Phys. D: Appl. Phys.

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It is commonly believed that in order to synthesize high-quality hydrogenated amorphous silicon carbide (a-Si1−xCx : H) films at competitive deposition rates it is necessary to operate plasma discharges at high power regimes and with heavy hydrogen dilution. Here we report on the fabrication of hydrogenated amorphous silicon carbide films with different carbon contents x (ranging from 0.09 to 0.71) at high deposition rates using inductively coupled plasma (ICP) chemical vapour deposition with no hydrogen dilution and at relatively low power densities (∼0.025 W cm−3) as compared with existing reports. The film growth rate Rd peaks at x = 0.09 and x = 0.71, and equals 18 nm min−1 and 17 nm min−1, respectively, which is higher than other existing reports on the fabrication of a-Si1−xCx : H films. The extra carbon atoms for carbon-rich a-Si1−xCx : H samples are incorporated via diamond-like sp3 C–C bonding as deduced by Fourier transform infrared absorption and Raman spectroscopy analyses. The specimens feature a large optical band gap, with the maximum of 3.74 eV obtained at x = 0.71. All the a-Si1−xCx : H samples exhibit low-temperature (77 K) photoluminescence (PL), whereas only the carbon-rich a-Si1−xCx : H samples (x ≥ 0.55) exhibit room-temperature (300 K) PL. Such behaviour is explained by the static disorder model. High film quality in our work can be attributed to the high efficiency of the custom-designed ICP reactor to create reactive radical species required for the film growth. This technique can be used for a broader range of material systems where precise compositional control is required.

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Section: Introductionmentioning

confidence: 99%

High-rate, low-temperature synthesis of composition controlled hydrogenated amorphous silicon carbide films in low-frequency inductively coupled plasmas

Cheng

Long

et al. 2008

J. Phys. D: Appl. Phys.

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“…Evidently, the island shape of the metal film increases their transmittance and decreases their conductivity [1]. Transmittance (T) is given by ratio of the intensity of the transmitting rays (I T ) through the film to the intensity of the incident rays (I o ) on it as follows [8], while the absorbance is defined as the ratio between absorbed light intensity (I A ) by material and the incident intensity of light (I o ) [9]. And the reflectance can be obtained from absorption and transmission spectrum in accordance to the law of conservation of energy by the relation [10].…”

Section: Biometals Alloysmentioning

confidence: 99%

Effect of sputtering power on optical Properties of RF sputtering deposited Ti6Al4V Thin Films

Khalaf¹

2019

IJP

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Ti6Al4V thin film was prepared on glass substrate by RFsputtering method. The effect of RF power on the optical propertiesof the thin films has been investigated using UV-visibleSpectrophotometer. It's found that the absorbance and the extinctioncoefficient (k) for deposited thin films increase with increasingapplied power, while another parameters such as dielectric constantand refractive index decrease with increasing RF power.

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“…1 (a, b, c) show the optical transmission spectra of V 2 O 5 "thin films in the wavelength range of (300-1100) nm prepared at different RF power, work pressures and temperature substrate. The transmission spectra have expressed opposite behavior of absorbance, where transmittance (T) is given by the ratio of the intensity of the rays (I T ) transmitting through the film to the intensity of the incident" rays (I o ) as following equation [17]:…”

Section: Optical Properties 1 Transmission (T)mentioning

confidence: 99%

The Influence of RF power, pressure and substrate temperature on optical properties of RF Sputtered vanadium pentoxide thin films

Salman¹

2019

IJP

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The V2O5 films were deposited on glass substrates which produce using "radio frequency (RF)"power supply and Argon gas technique. The optical properties were investigated by, UV spectroscopy at "radio frequency" (RF) power ranging from 75 - 150 Watt and gas pressure, (0.03, 0.05 and 0.007 Torr), and substrate temperature (359, 373,473 and 573) K. The UV-Visible analysis shows that the average transmittance of all films in the range 40-65 %. When the thickness has been increased the transhumance was decreased from (65-40) %. The values of energy band gap were lowered from (3.02-2.9 eV) with the increase of thickness the films in relation to an increase in power, The energy gap decreased (2.8 - 2.7) eV with an increase in the pressure and substrate temperature respectively.

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Optical study of disorder and defects in hydrogenated amorphous silicon carbon alloys

Cited by 12 publications

References 12 publications

High-rate, low-temperature synthesis of composition controlled hydrogenated amorphous silicon carbide films in low-frequency inductively coupled plasmas

High-rate, low-temperature synthesis of composition controlled hydrogenated amorphous silicon carbide films in low-frequency inductively coupled plasmas

Effect of sputtering power on optical Properties of RF sputtering deposited Ti6Al4V Thin Films

The Influence of RF power, pressure and substrate temperature on optical properties of RF Sputtered vanadium pentoxide thin films

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