Optical study of the band structure of wurtzite GaP nanowires

Assali, Simone; Greil, Johannes; Zardo, Ilaria; Belabbes, Abderrezak; Moor, Michiel W. A. de; Koelling, Sebastian; Koenraad, P. M.; Bechstedt, F.; Bakkers, Erik P. A. M.; Haverkort, J.E.M.

doi:10.1063/1.4959147

Cited by 40 publications

(97 citation statements)

References 63 publications

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“…3) в точности совпадает со спектром ФЛ вюрцитных ННК GaP, по-лученных ранее в [22] при аналогичных плотности возбуждения и температуре. Самый интенсивный пик в спектре ФЛ с максимумом при 2.14 эВ соответствует, по-видимому, связанному экситону на глубоком примесном центре, а остальные, более длинноволновые максимумы, соответствуют его LO/TO фононным репликам [22,23]. Такой вид спектра ФЛ является характерным для ННК с гексагональной кристаллической структурой [1,22].…”

Section: международный симпозиум " нанофизика и наноэлектроника"unclassified

XXI Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 13-16 марта 2017 г. Нитевидные нанокристаллы GaP/Si (111), синтезированные методом молекулярно-пучковой эпитаксии с переключением гексагональной и кубической фазy -=SUP=-*-=/SUP=-

Штром¹,

Сибирев²,

Убыйвовк³

et al. 2018

Физика И Техника Полупроводников

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A theoretical and experimental description of the synthesis of GaP nanowire crystals by molecularbeam epitaxy on Si(111) substrates with the use of gold as a catalyst is presented. The ratio between the fluxes of materials to be deposited and the substrate temperature are varied for a short time during nanowire synthesis in order to analyze the possibility of producing nanoinclusions of different polytypes. It is established that variations in the ratio between the fluxes of materials to be deposited and in the growth temperature bring about the controllable formation of inclusions, among them are structurally cubic crystalline regions. The inclusions are several nanometers thick.

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Section: международный симпозиум " нанофизика и наноэлектроника"unclassified

XXI Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 13-16 марта 2017 г. Нитевидные нанокристаллы GaP/Si (111), синтезированные методом молекулярно-пучковой эпитаксии с переключением гексагональной и кубической фазy -=SUP=-*-=/SUP=-

Штром¹,

Сибирев²,

Убыйвовк³

et al. 2018

Физика И Техника Полупроводников

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“…4 Recent photoluminescence (PL) studies on WZ GaP NWs provided a deeper understanding on the band gap and excitonic emission in this material system. 5,6 However, additional knowledge on the WZ GaP parameters such as the refractive index would be beneficial for the design of opto-electrical devices based on WZ GaP. In this work, we report a method to estimate the refractive index for materials which are available only in the nanowire geometry.…”

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confidence: 99%

“…The NWs used in this work were grown according to the recipe provided in our earlier publications, 5,6 resulting in the WZ GaP/Al 0.4 Ga 0.6 P core/shell NWs with lengths above 6 lm and diameters of approximately 220 nm. For micro-PL measurements, the NWs were transferred to a thermally oxidized Si wafer with gold markers and cooled down to 4 K. The optical data were collected in the backscattering geometry using a NA ¼ 0.7 Nikon 50Â CR objective, and a 0.30 m spectrometer equipped with 1200 g/mm grating (500 nm blazing angle).…”

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confidence: 99%

“…For the fundamental HE 11 mode, the electric field is tightly confined in the nanowire, having a maximum field in the nanowire's center and an electric field polarized perpendicular to the nanowire, allowing for efficient coupling with the emitting dipoles due to the wurtzite selection rules. 6 The next tightly confined mode is the TE 01 mode with a field intensity equal to zero along the nanowire axis and thus limited spatial overlap with emitting dipoles close to the nanowire's center. In Fig.…”

mentioning

confidence: 99%

“…21,22 In addition, the transparency of WZ GaP for wavelengths above 569 nm (Ref. 6) combined with the extremely high value of the refractive index may provide applications as a 1D metamaterial, [23][24][25] where a control of the optical path of the light without absorption is required.…”

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confidence: 99%

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High refractive index in wurtzite GaP measured from Fabry-Pérot resonances

Assali

Dam

Haverkort

et al. 2016

Applied Physics Letters

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We investigate the optical emission of wurtzite GaP/Al0.4Ga0.6P core/shell nanowires (NWs) transferred to a SiOx substrate to demonstrate a high degree of waveguiding of the emitted photoluminescence (PL) signal. By analysing the Fabry-Pérot mode spacing in combination with calculations of the guided modes in the NWs, we calculate a very high refractive index of bulk WZ GaP of 4.2 at a wavelength of 600 nm. The measured quality factors up to 600 indicate the excellent optical quality of the nanowire resonator.

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Electrically‐Driven Light Source Embedded in a GaP Nanowaveguide for Visible‐Range Photonics on Chip

Lebedev,

Solomonov,

Fedorov

et al. 2024

Advanced Optical Materials

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The key components of photonic integrated circuits are nanoscale optica emitters and nanowaveguides. III‐V semiconductor nanostructures are considered as the most promising material platform for these components due to highly efficient luminescence and high refractive index, but the problem of emission coupling with waveguide is to be solved. In this work, the use of GaP nanowires (NWs) with different types of doping (GaP:Si or GaP:Be) is proposed as optical waveguides with directly integrated electrically‐driven light sources, solving the problem of emission‐to‐waveguide coupling. Single NWs are integrated with electrodes and pump electroluminescence by a tunnel junction allowing to study emission properties with nanoscale spatial resolution. Basing on the experiments on scanning tunnelling microscopy (STM), electron microscopy, time‐resolved photoluminescence micro‐spectroscopy, X‐ray diffraction, and STM‐induced electroluminescence, it is proven that GaP NWs exhibit different integrated light‐source on doping type of NWs. GaP:Be NWs contain inclusion of the crystalline wurtzite phase with a direct bandgap, and, thus, these NW regions can be considered as electrically‐driven nanoscale sources of light monolithically integrated into GaP NW‐based waveguides. Meanwhile, GaP:Si NWs work as optical waveguides capable of efficient light generation over the entire length of NW. The developed designs are promising for construction of integrated photonic circuits.

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Optical study of the band structure of wurtzite GaP nanowires

Cited by 40 publications

References 63 publications

High refractive index in wurtzite GaP measured from Fabry-Pérot resonances

Electrically‐Driven Light Source Embedded in a GaP Nanowaveguide for Visible‐Range Photonics on Chip

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