1986
DOI: 10.1016/0038-1098(86)90499-0
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Optical transitions in Zn3P2 within the 0.06–1.4 eV energy range

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Cited by 19 publications
(4 citation statements)
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“…Previous experimental studies of Zn 3 P 2 , including SAE grown Zn 3 P 2 , 16 have shown transitions or defect levels in the range of 0.14–0.20 eV, 0.25–0.29 eV, and 0.36 eV below the bandgap, which puts them in the potential range of these rotated interfaces. 6,16–18,36,37,39–44,72 While there may be other origins of transitions in this range acting in parallel, these rotated domains are a potential source. With this in mind, we inspected the surface of zigzag nanowires grown by a vapour–liquid–solid (VLS) growth mechanism (as opposed to the vapour–solid (VS) one of SAE) that are terminated with (101) facets, but still exhibit sub-bandgap emission in a similar range as to those calculated here.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Previous experimental studies of Zn 3 P 2 , including SAE grown Zn 3 P 2 , 16 have shown transitions or defect levels in the range of 0.14–0.20 eV, 0.25–0.29 eV, and 0.36 eV below the bandgap, which puts them in the potential range of these rotated interfaces. 6,16–18,36,37,39–44,72 While there may be other origins of transitions in this range acting in parallel, these rotated domains are a potential source. With this in mind, we inspected the surface of zigzag nanowires grown by a vapour–liquid–solid (VLS) growth mechanism (as opposed to the vapour–solid (VS) one of SAE) that are terminated with (101) facets, but still exhibit sub-bandgap emission in a similar range as to those calculated here.…”
Section: Resultsmentioning
confidence: 99%
“…35–38 Various defect levels in the bandgap have been experimentally probed by various groups previously, but very few have been able to describe the exact origins. 36,37,39–44 Conversely, other studies have observed defects, such as rotated domains observed through electron microscopy, but their exact nature and influence on the materials properties is yet to be ascertained. 16 This creates a need for systematic and comprehensive studies able to correlate the different factors related to defect structure and their influence in Zn 3 P 2 in order for it to realise its potential.…”
Section: Introductionmentioning
confidence: 98%
“…This acceptor level value agrees with the one obtained by absorption measurements. 12 In conclusion, we have succeeded in the MBE growth of Zn 3 P 2 films on ͑001͒ GaAs substrates, and showed the results of Hall effect and PL measurements on n-type Zn 3 P 2 . The Zn 3 P 2 films indicate n-type conductivity instead of the usual p-type conductivity due to its strong self-compensation effect.…”
Section: ͓S0003-6951͑96͒02642-3͔mentioning
confidence: 95%
“…Till now, only a few papers have been published in which the lattice modes of Ζn3P2 were investigated [1][2][3][4][5].…”
Section: Introductionmentioning
confidence: 99%