“…Previous experimental studies of Zn 3 P 2 , including SAE grown Zn 3 P 2 , 16 have shown transitions or defect levels in the range of 0.14–0.20 eV, 0.25–0.29 eV, and 0.36 eV below the bandgap, which puts them in the potential range of these rotated interfaces. 6,16–18,36,37,39–44,72 While there may be other origins of transitions in this range acting in parallel, these rotated domains are a potential source. With this in mind, we inspected the surface of zigzag nanowires grown by a vapour–liquid–solid (VLS) growth mechanism (as opposed to the vapour–solid (VS) one of SAE) that are terminated with (101) facets, but still exhibit sub-bandgap emission in a similar range as to those calculated here.…”