Optical transparency and development of failure in quartz glass under dynamic load

Li, Yonghong; Liu, Fusheng; Hai-Yun, Ma; Cheng, Xiaoli; Ma, Xiao-Juan; Yan-Yun, Sun; Ming-Jian, Zhang; Xue, Xuedong

doi:10.7498/aps.59.2104

Cited by 8 publications

(3 citation statements)

References 18 publications

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“…The composites in this study contains 50 vol% SiC particle(diameter 70µm) and aluminum alloy A356, the reason for selected aluminum alloy A356 is acceptable mechanical properties and castability, the shape of SiC particle selected alike spherical shapes and irregular shapes. Materials were prepared by pressureless infiltration method in atmosphere which evolve from the Lanxide pressureless infiltration in nitrogen, the characteristic is molten Al alloy could infilter SiC particles layer, and form high volume fraction SiC p /Al composites with the same mold shape, it calls near-net shape technology [11].…”

Section: Methodsmentioning

confidence: 99%

The Research on Thermal Residual Stress of SiC<sub>p</sub>/Al Composites

Zou

Zhang

et al. 2014

AMR

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SiCp/Al composites would produce a large thermal residual stresses field during cooling process. The thermal residual stress has a greater impact to the composites dimension stability and the accuracy of application. In this paper, the thermal residual stress in SiCp/A356 composites was measured by X-ray diffraction and simulated by finite element method (FEM), the influence of particle shapes and cooling rates are considered, the stress field contour nephogram and stress-time curve during cooling was simulated. The studies present residual stress formed during cooling process because of the difference of thermal expansion coefficient (CTE) between SiC particle and aluminum alloy, the maximum stress distributes near the interface of matrix/SiCp mainly. The stress-time curves are inconsistent under different cooling rates, the higher cooling rate, the more dramatic variety in stress.

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Section: Methodsmentioning

confidence: 99%

The Research on Thermal Residual Stress of SiC<sub>p</sub>/Al Composites

Zou

Zhang

et al. 2014

AMR

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“…此时得到的正电子湮灭寿命计算值为99.8 ps, 与Uedono等 [51] 采用电子辐射手段测量的人工合成的IIa型金刚石晶体中正电子湮灭平均寿命98.7 ps相近, 同时与Shiryaev等 [52] 报道的单晶金刚石中正电子湮灭寿命98 ps相近. 对于金刚石中存在单空位的情况, 正电子湮灭寿命有所增加, 如Dannefaer等 [53] 采用3.5 MeV电子辐系, 空位区域受到最近邻4个C原子的库仑作用与Maier等 [57] 观察到的实验结果一致. 这种情况主要由于W和Mo原子的电子化学势较高, 分别为0.35 和0 eV [56] .…”

Section: 金刚石晶格中的正电子湮灭寿命unclassified

Calculation of positron annihilation lifetime in diamond doped with B, Cr, Mo, Ti, W, Zr

Zhao,

Yan,

Liu

2024

Acta Phys. Sin.

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Metal-matrix diamond composites have been extensively applied and studied, but vacancies, doping, and other defects caused by the pretreatment of the diamond surface significantly impact the interface performance between the metal base and diamond. Although techniques like transmission electron microscopy and spectroscopy analysis have been utilized for defect detection, they present certain limitations. Calculating the positron annihilation lifetime in diamond provides an accurate assessment of interface defects in the diamond. This study uses first-principles calculation methods, adopting various positron annihilation algorithms and enhancement factors, to compute the positron annihilation lifetime in ideal diamond crystals, single vacancies, and when doped with B, Cr, Mo, Ti, W, and Zr. The results, obtained using local density functional in combination with Boronski & Nieminen algorithms and RPA restriction as annihilation enhancement factors, indicate that the computed positron annihilation lifetime of diamond is 119.87ps, aligning closely with literature experimental results. Furthermore, after doping B, Cr, Mo, Ti, W, and Zr atoms in diamond (doping concentration of 1.6at%), the positron annihilation lifetime changed from a single vacancy 119.87ps to 148.57, 156.82, 119.05, 116.5, 117.62, and 115.74ps respectively. This implies that defects due to doped atoms in diamond alter its positron annihilation lifetime, with the impact varying according to the different atoms doped. Based on the calculated electron density in diamond vacancies and doped atom areas, it was discovered that doping atoms did not cause severe distortion in the diamond lattice. However, after doping B and Cr atoms, a significant increase in positron annihilation lifetime was noted. The primary reason is the relatively low positron affinity of B and Cr atoms, resulting in an extended positron residence time in the vacancy, thereby increasing the annihilation lifetime. Overall, vacancies and doped atom defects in diamond will cause changes in its positron annihilation lifetime, and the above conclusions provide crucial theoretical references for detecting and identifying interface defects caused by doping treatment on the diamond surface during the preparation of metal-matrix diamond composites.

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“…However, the decrease rate of transmissivity in EXP0121 is about 2.2 times that in EXP0729. The reason for this is that the front window in EXP0121 is fused quartz, and the transmissivity of fused quartz may be reduced at 12.1 GPa [17], while the front window material in EXP0729 is single crystal LiF, which has good optical stability until 200 GPa [18].…”

Section: Rear Windowmentioning

confidence: 99%

The investigation of the ignition mechanism of shocked 98 wt% hydrogen peroxide based on transmissivity measurement

Liao¹,

Sun²,

Wu³

et al. 2022

EPL

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The behavior of 98 wt% hydrogen peroxide in delay period under shock loading was researched by optical transmissivity in-situ detection system. The time evolution of the transmissivity of 98 wt% hydrogen peroxide in the delay period is firstly presented. The experimental phenomenon shows that when the shock pressure in hydrogen peroxide reaches the ignition level, a large number of clusters will be produced inside the hydrogen peroxide. The formation of new clusters provides the reserve of energy for ignition. Those clusters formed by hydrogen peroxide in the delay period may act as hot spots, which leads the homogeneous explosives to reach the heterogeneous state before ignition. This conclusion is reasonable for revealing the ignition mechanism of homogeneous explosive. The particle behavior in the delay period gives us a new method to detect the ignition pressure. The experiments also confirm that the ignition pressure of 98 wt% hydrogen peroxide is just between 9.3 GPa and 12.1 GPa.

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Optical transparency and development of failure in quartz glass under dynamic load

Cited by 8 publications

References 18 publications

The Research on Thermal Residual Stress of SiC<sub>p</sub>/Al Composites

The Research on Thermal Residual Stress of SiC<sub>p</sub>/Al Composites

Calculation of positron annihilation lifetime in diamond doped with B, Cr, Mo, Ti, W, Zr

The investigation of the ignition mechanism of shocked 98 wt% hydrogen peroxide based on transmissivity measurement

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