1980
DOI: 10.1016/0038-1098(80)91199-0
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Optical verification of the valence band structure of cadmium arsenide

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Cited by 34 publications
(12 citation statements)
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“…For Cd 3 P 2 the calculations performed within the zincblende approximation with use of the SETB method, led to a direct band gap of 0:53 eV [27]. This result is in good agreement with the optical data [13] and with the value obtained from Shubnikov-de Haas oscillations [14]. The experimental data confirm the existence of a direct energy gap in Cd 3 P 2 .…”
supporting
confidence: 85%
“…For Cd 3 P 2 the calculations performed within the zincblende approximation with use of the SETB method, led to a direct band gap of 0:53 eV [27]. This result is in good agreement with the optical data [13] and with the value obtained from Shubnikov-de Haas oscillations [14]. The experimental data confirm the existence of a direct energy gap in Cd 3 P 2 .…”
supporting
confidence: 85%
“…Further series of optical and magneto-optical Cd 3 As 2 studies were performed on various mono-or polycrystalline samples during the seventies and eighties. The collected data was primarily analyzed within the framework of the Kane model [13,61,[85][86][87], and later on the Bodnar model [88,89,91]. The authors of these works concluded that the electronic band structure at the Γ point is fairly well described using these models: it is inverted, with the p-type arsenic states above the s-like cadmium states, and characterized by a relatively small negative band gap.…”
Section: Optical Propertiesmentioning
confidence: 99%
“…In Cd3As 2 the effective mass is dependent on the carrier concentration. In our calculations we have taken the numerical results for the effective mass of [2] and [13]. In our calculation the actual carrier concentration profile is replaced by a large number (typically I00) of uniform layers.…”
Section: Theoretical Modelmentioning
confidence: 99%