Optically Activated Gate Control for Power Electronics

Photonic power electronics: Past, present, and future

“…So, the turn-on and turn-off time can be adjusted either by manipulating the amplitudes of the photogenerated current-source strength and PCS conductivity or by varying the time-period of the triggering pulses, thus allowing the gate capacitance of the OT-MOS to charge or discharge for a varying time. Consequently, there are possibilities of using both amplitude- and pulse-width modulation techniques for the activating optical pulses [21], [22].…”

“…Fig. 6 shows the device structure of a GaAs-based optically-triggered power transistor (OTPT), micrograph of a prototype OTPT, and its packaged realization [27]. GaAs has a high level of light absorption and hence a high quantum efficiency.…”

“…For (a) and (b), the top trace is the voltage across the OTPT and the bottom trace is the output current signal of the laser driver.The laser-driver current signal is measured through an internal current monitor of the laser-driver and is of negative polarity. The threshold current, at which the lasing starts, is ~ 6 A[27]. Nominal switching operation for the OTPT(s) coupled to different types of power semiconductor devices[27].…”

“…The threshold current, at which the lasing starts, is ~ 6 A[27]. Nominal switching operation for the OTPT(s) coupled to different types of power semiconductor devices[27]. From top to bottom: Si-based power MOSFET (CoolMOS part number 47N50); Si-based IGBT (IRG4CC50); 600-V normally-on SiC-based VJFET; and 600-V SiC-based DMOSFET.…”

Optical power-electronic technology

“…Fig. 1 shows the d the GaAs-based OTPT, micrograph of and its packaged realization [1]. The O structure with two electrodes: collecto drift, P-base, and N+ collector regions MOCVD technique.…”