Optically-activated gate control of power semiconductor device switching dynamics

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs

Crébier

Lesaint

2011

Abstract-An integrated solution for the galvanic isolation between power transistors and their control unit is presented in this paper. This solution is based on a monolithic integration of a photodetector within a power MOSFET without any modification of its fabrication process. This photoreceiver can be associated with a monolithic driver to drive high side switches. Exhaustive characteristics for several integrated photodetectors are presented and discussed: quantum efficiency, step response, small signal analysis and sensitivity to the High Voltage MOSFET's Drain. The results of this analysis are photoreceivers with a Full Width at Half Maximum above 300MHz and a responsivity above 0.15A/W at a wavelength of 500nm. This leads to an integrated low power and high bandwidth optical isolation.

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Integrated low power and high bandwidth optical isolator for monolithic power MOSFETs driver

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs

Crébier

Lesaint

2011

“…Indeed, the voltage difference between their reference potential and the external remote command can be brought to high floating voltages. Insulation systems in most power electronics circuits are level shifters [1], optocouplers [2] or discrete magnetic or piezoelectric transformers [3,4]. The transformers' benefits over other insulated control signal transfer systems are that they are not as sensitive to EMI and voltage ratings as level shifters, they are faster and less consumer than optocouplers [5].…”

Section: Introductionmentioning

confidence: 99%

Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip

Simonot

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs

Jean-Christophe

et al. 2011

Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip. Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip, Abstract-With the development of multi-level, multiphase or network converters requiring the implementation of numerous distinct power transistor gate drivers, the control signal insulation is becoming more and more important in power converters. This paper presents an isolation technique based on a coreless transformer integrated in a CMOS silicon die together with the gate driver and other required functions. The associated demodulation circuit will also be presented, as the control signal must be modulated at a high frequency through the coreless transformer. The chosen design methodology will be explained and experimental results will be shown in order to validate the functionality.I.

“…As it is shown in figure 1, several functions are required for a proper drive of power MOSFETs, such as a control signal insulation system, an amplification of the control signal, protection circuits and also a floating supply to deliver energy to these systems. Gate signal insulation systems in many power electronics circuits are classically achieved with a magnetic or piezoelectric transformer [1,2], a level shifter [3], or can be integrated using an optical receiver [4,5] or using a wireless HF transmitter [6]. Then, the amplification of the driving signal is needed as close as possible to the power transistor gate in order to minimize inductive effects and coupling resulting in increased commutation losses.…”

Section: Introductionmentioning

confidence: 99%

Design and characterization of an integrated CMOS gate driver for vertical power MOSFETs

Simonot

2010 IEEE Energy Conversion Congress and Exposition

Crébier

2010

Currently, the trends in energy management are performance enhancement and increase in system reliability for the reduction of energy consumption. In this context, the integration of the gate driver within power transistors is particularly appropriate. This integration offers multiple advantages, from electrical and EMI performance improvement to power module size reduction, and reliability and functionality increase. This article presents a power MOSFET gate driver system developed with an approach which consists in including all the circuits required to drive a power switch on a single CMOS chip. The CMOS driver chip functionalities will be presented in this paper, and its design will be explained. Finally, experimental results of the fabricated chip used in a buck converter topology will be shown and discussed. Index Terms--power conversion, power MOSFET gate drive, integrated circuit design, hybrid integration