Optically Coherent Nitrogen-Vacancy Defect Centers in Diamond Nanostructures

Orphal-Kobin, Laura; Unterguggenberger, Kilian; Pregnolato, Tommaso; Kemf, Natalia; Matalla, Mathias; Unger, Ralph-Stephan; Ostermay, Ina; Pieplow, Gregor; Schröder, Tim

doi:10.1103/physrevx.13.011042

Cited by 22 publications

(5 citation statements)

References 55 publications

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“…For a few data sets recorded at the lowest laser power, we obtain fitted linewidths slightly below the lifetime-limited 265 values of 26 MHz (14 MHz), calculated as (2πτ ) −1 from the A 1 (A 2 ) lifetimes τ = 6.1 ns (11.3 ns) [32]. This phenomenon has been studied in detail in a previous work [33], where it was shown that measurements at low signalto-noise can lead to an underestimation of the resonant 270 linewidths. This is also corroborated by our studies.…”

Section: Resonant Laser Excitation Measurements In Membranes and Bulkmentioning

confidence: 82%

Spectral stability of V2-centres in sub-micron 4H-SiC membranes

Körber,

Heiler,

Hesselmeier

et al. 2023

Preprint

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Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences. However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced spectral stabilities. Here, we provide a large-scale systematic investigation on silicon vacancy centres in thin silicon carbide membranes with thicknesses down to 0.25 μm. Our membrane fabrication process involves a combination of chemical mechanical polishing, reactive ion etching, and subsequent annealing. This leads to highly reproducible membranes with roughness values of 3–4 Å, as well as negligible surface fluorescence. We find that silicon vacancy centres show close-to lifetime limited optical linewidths with almost no signs of spectral wandering down to membrane thicknesses of ∼0.7 μm. For silicon vacancy centres in thinner membranes down to 0.25 μm, we observe spectral wandering, however, optical linewidths remain below 200 MHz, which is compatible with spin-selective excitation schemes. Our work clearly shows that silicon vacancy centres can be integrated into sub-micron silicon carbide membranes, which opens the avenue towards obtaining the necessary improvements in photon extraction efficiency based on nanophotonic structuring.

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Section: Resonant Laser Excitation Measurements In Membranes and Bulkmentioning

confidence: 82%

Spectral stability of V2-centres in sub-micron 4H-SiC membranes

Körber,

Heiler,

Hesselmeier

et al. 2023

Preprint

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show abstract

“…In turn, a small emitter‐surface distance would potentially promote undesired interactions between the emitter's dipole and surface charges. [ 30,31 ]…”

Section: Resultsmentioning

confidence: 99%

‘Sawfish’ Photonic Crystal Cavity for Near‐Unity Emitter‐to‐Fiber Interfacing in Quantum Network Applications

Bopp,

Plock,

Turan

et al. 2023

Advanced Optical Materials

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Photon loss is one of the key challenges to overcome in complex photonic quantum applications. Photon collection efficiencies directly impact the amount of resources required for measurement‐based quantum computation and communication networks. Promising resources include solid‐state quantum light sources. However, efficiently coupling light from a single quantum emitter to a guided mode remains demanding. In this work, photon losses are eliminated by maximizing coupling efficiencies in an emitter‐to‐fiber interface. A waveguide‐integrated ‘Sawfish’ photonic crystal cavity is developed and finite element (FEM) simulations are employed to demonstrate that such an emitter‐to‐fiber interface transfers, with 97.4 % efficiency, the zero‐phonon line (ZPL) emission of a negatively‐charged tin vacancy center in diamond (SnV−) adiabatically to a single‐mode fiber. A surrogate model trained by machine learning provides quantitative estimates of sensitivities to fabrication tolerances. The corrugation‐based Sawfish design proves robust under state‐of‐the‐art nanofabrication parameters, maintaining an emitter‐to‐fiber coupling efficiency of 88.6 %. Applying the Sawfish cavity to a recent one‐way quantum repeater protocol substantiates its potential in reducing resource requirements in quantum communication.

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“…Color centers in diamond are a promising platform for quantum sensing and quantum network applications ( 1 – 4 ). Group IV vacancy centers (G4V) in diamond, including silicon (SiV), germanium (GeV), and tin (SnV) vacancies, have exceptional optical properties such as a bright zero-phonon lines, large Debye-Waller factors, and lifetime-limited linewidths ( 5 – 8 ).…”

Section: Introductionmentioning

confidence: 99%

Fast optoelectronic charge state conversion of silicon vacancies in diamond

Rieger,

Villafañe,

Todenhagen

et al. 2024

Sci. Adv.

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Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications in photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed for scaling to multiqubit devices. Here, we manipulate the charge state of silicon vacancy (SiV) ensembles by combining luminescence and photocurrent spectroscopy. We controllably convert the charge state between the optically active SiV − and dark SiV 2− with megahertz rates and >90% contrast by judiciously choosing the local potential applied to in-plane surface electrodes and the laser excitation wavelength. We observe intense SiV − photoluminescence under hole capture, measure the intrinsic conversion time from the dark SiV 2− to the bright SiV − to be 36.4(67) ms, and demonstrate how it can be enhanced by a factor of 10 5 via optical pumping. Moreover, we obtain previously unknown information on the defects that contribute to photoconductivity, indicating the presence of substitutional nitrogen and divacancies.

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Optically Coherent Nitrogen-Vacancy Defect Centers in Diamond Nanostructures

Cited by 22 publications

References 55 publications

Spectral stability of V2-centres in sub-micron 4H-SiC membranes

Spectral stability of V2-centres in sub-micron 4H-SiC membranes

‘Sawfish’ Photonic Crystal Cavity for Near‐Unity Emitter‐to‐Fiber Interfacing in Quantum Network Applications

Fast optoelectronic charge state conversion of silicon vacancies in diamond

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