Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using Al_xGa_1–xN/GaN High Electron Mobility Transistor Structures on Si (111)

Abstract

In this article, we report on an optically coupled, electrically isolated switch based on the III-nitride heterostructures on a silicon substrate. All the circuit elements, including the ultraviolet (UV) detector and a normally on transistor, were monolithically integrated on a single Al x Ga 1−x N/GaN high electron mobility transistor (HEMT) stack grown on a 200 mm Si (111) substrate, and the process was fully compatible with conventional III-N HEMT fabrication flow. On-wafer UV detector was realized using a gaterecessed architecture which exhibited excellent spectral responsivity and broadband nature, while the discrete HEMT was found to exhibit ON current of 500 mA/mm. The integrated system was found to switch from an OFF-state current of 5 μA (UV-Off) to an ON-state current of 50 mA (UV-ON) in ∼4 ms, and this delay may be further reduced with optimization of such a monolithic device design and improvement of crystal quality of nitrides on the large area Si platforms.

Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors

“…The ≈5.5 μm‐thick HEMT stack on 1 mm p‐type Si(111) was grown by metal organic chemical vapor deposition (MOCVD) . The unintentional C‐doped GaN buffer layer of thickness ≈1500 nm was grown prior to overgrowth of the top 2D electron gas (2DEG) structures.…”

“…The continuous research and development in the field of III‐nitrides in the past three decades had enabled the technologies which were difficult to realize with conventional semiconductors . One of the promising technologies realized by nitride semiconductors is high‐power HEMT switches.…”

Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure

“…[16][17][18][19][20][21][22] Moreover, AlGaN/GaN high electron mobility transistors (HEMTs), which employ a GaN-based heterostructure, can form 2D electron gas ( in highly responsive UV photodetectors. [23][24][25][26][27][28][29][30] The formation of 2-DEG with high carrier density and electron mobility due to the piezoelectric and spontaneous polarization without any intentional doping has frequently been referred to as a potential material for the next generation high power and high-frequency devices. [22,23] The addition of a p-GaN layer to the AlGaN/GaN changes the resulting p-GaN/AlGaN/GaN HEMT (enhancement-mode) from normally-on to normally-off through band bending and suppression of 2-DEG at zero-bias, which leads to low dark current.…”

Demonstration of p-GaN/AlGaN/GaN-based ultraviolet phototransistors with sub-saturated transfer characteristics

“…Among them, GaNbased high-electron-mobility transistors (HEMTs) have received more attention for high-efficiency UV PDs [4][5][6]. Thanks to the high-density two-dimensional electron gas (2DEG) in the interface of AlGaN/GaN heterostructure, an ultrahigh photoresponsivity and ultrafast photoresponse can be observed in the HEMT-based UV PDs [7][8][9]. In addition, the transistor operation provides the HEMT-based UV PDs 1 Dingbo Chen and Penghao Zhang contribute equally to this paper.…”