1985
DOI: 10.1002/pssb.2221300239
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Optically Detected Cyclotron Resonance in AgBr

Abstract: Optically detected magnetic resonance (ODMR) studies reveal cyclotron resonance of electrons and holes in AgBr as well as a number of paramagnetic resonances already observed by other workers. Cyclotron resonance signals are observed in the recombination radiation from excitons bound t o iodine isoelectronic impurities. Asymmetry of the electron-cyclotron resonance gives a measure of the nonparabolicity of the conduction band which results in an energy dependent effective mass. The enhanced trapping of electro… Show more

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Cited by 18 publications
(1 citation statement)
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“…In the former case, the PL intensity is affected by MW-heated carriers as a result of impact ionization 4-7 or a change in carrier capture to defects. 7,8 Which of these effects dominates depends strongly on the properties of the materials and experimental conditions. In Si, Ge, and some III-V compound semiconductors, impact ionization of excitons and shallow impurities is shown to be the dominant mechanism, 4-7 while lattice heating at the CR has been found to play an important role in some ternary semiconductors.…”
Section: Introductionmentioning
confidence: 99%
“…In the former case, the PL intensity is affected by MW-heated carriers as a result of impact ionization 4-7 or a change in carrier capture to defects. 7,8 Which of these effects dominates depends strongly on the properties of the materials and experimental conditions. In Si, Ge, and some III-V compound semiconductors, impact ionization of excitons and shallow impurities is shown to be the dominant mechanism, 4-7 while lattice heating at the CR has been found to play an important role in some ternary semiconductors.…”
Section: Introductionmentioning
confidence: 99%