Optically detected cyclotron resonance of GaAs quantum wells: Effective-mass measurements and offset effects

Warburton, R. J.; Michels, J.G.; Nicholas, R.J.; Harris, J. J.; Foxon, C.T.

doi:10.1103/physrevb.46.13394

Cited by 62 publications

(19 citation statements)

References 26 publications

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“…The potential that localizes the electrons can arise from charged impurities or from monolayer-width interface fluctuations that lead to randomly distributed potential fluctuations. The effect of electron localization on the CR was previously observed in the far-infrared range for Si inversion layers and for doped and undoped QWs, where the CR field shifted and its lineshape broadened at low electron density [3,5]. This effect was interpreted in terms of electronic bound states in a harmonic oscillator-type potential representing the charged interface potential fluctuations or that of monolayer-width fluctuations [5].…”

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confidence: 86%

“…This effect was interpreted in terms of electronic bound states in a harmonic oscillator-type potential representing the charged interface potential fluctuations or that of monolayer-width fluctuations [5]. In our undoped MQWs the potential that causes these localization phenomena is most probably due to interface fluctuations [3].…”

mentioning

confidence: 99%

“…Since the free electron effective mass m * = 0.066m 0 (in bulk GaAs [4]) and m * = 0.068m 0 for a 200Å GaAs/AlAs MQW (calculated), we can explain the low m cr value by electron localization at low temperatures. In an attractive localizing potential the electron cyclotron mass is given by [3] …”

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confidence: 99%

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Properties of photoexcited electrons and holes in undoped GaAs/AlGaAs QWs studied by classical cyclotron resonance

Kozhevnikov

Ashkinadze

Cohen

et al. 1998

Superlattices and Microstructures

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confidence: 86%

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confidence: 99%

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Properties of photoexcited electrons and holes in undoped GaAs/AlGaAs QWs studied by classical cyclotron resonance

Kozhevnikov

Ashkinadze

Cohen

et al. 1998

Superlattices and Microstructures

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“…It was proved to be extremely sensitive and has been successfully used to measure the effective masses of electrons and holes in bulk GaAs, InP, CdTe [5,6,7], and SiC [8]. It was also developed to study 2D electron states in GaAs/(Al,Ga)As heterostructures [9,10,11] and internal transitions of neutral and charged magnetoexcitons [12,13,14]. Another advantage of the ODR technique is related to its spectral selectivity, which allows for selecting the signal from different quantum wells grown in the same structure by analyzing the corresponding photoluminescence emission lines.…”

Section: Introductionmentioning

confidence: 99%

Electron cyclotron mass in undopedCdTe∕CdMnTequantum wells

Dremin

Yakovlev

Sirenko³

et al. 2005

Phys. Rev. B

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Optically detected cyclotron resonance of two-dimensional electrons has been studied in nominally undoped CdTe/(Cd,Mn)Te quantum wells. The enhancement of carrier quantum confinement results in an increase of the electron cyclotron mass from 0.099m0 to 0.112m0 with well width decreasing from 30 down to 3.6 nm. Model calculations of the electron effective mass have been performed for this material system and good agreement with experimental data is achieved for an electron-phonon coupling constant α=0.32.

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“…6, there is little or no ODR signal at the calculated position of free electron CR. (The calculation was done with a two-band model; so the triangles represent a lower limit in field for the resonance [19].) This is not surprising since free carrier CR should not be possible at low carrier temperatures for the narrowest wells because the lateral confining potential is of the order of 10 meV, much larger than kT .…”

Section: Optically Detected Resonance Spectroscopymentioning

confidence: 99%

Internal Transitions of Charged Excitons in AlGaAs/GaAs Lateral Fluctuation Quantum Dots

et al. 2004

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Low temperature measurements of magneto-photoluminescence and optically detected resonance spectroscopy in magnetic fields up to 10 T were carried out on GaAs/Al 0.3 Ga 0.7 As quantum well samples grown by molecular beam epitaxy with lateral fluctuation quantum dots produced by growth interruption. Monolayer fluctuations of the quantum well width form lateral quantum dots for which confinement energies are less than Coulomb correlation energies. Five different width quantum wells (2.8-14.1 nm) were grown in a single sample, doped in the barriers with Si donors to allow for photoluminescence of both excitons and trions. We report studies of the optically detected resonance spectra associated with the ensemble photoluminescence of all of the wells including observation of bound-to-continuum internal transitions of trions, both singlet and triplet, and electron cyclotron resonance for the wider wells, which also show a clear bound-to-bound triplet transition. The latter is forbidden by magnetic translational invariance, but can be seen in these samples because this symmetry is broken by the lateral fluctuations, whose characteristic dimensions are greater than the trion orbit size. The two narrowest wells show strong broad optically detected resonance signals associated with inhomogeneously broadened internal transitions of the strongly correlated trions in the lateral dots. The optically detected resonance signals peak well below the calculated positions of electron cyclotron resonance. As expected for localized carriers and excitons, there is no free electron cyclotron resonance. We also present preliminary measurements of optically detected resonance spectra from a single dot.

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Optically detected cyclotron resonance of GaAs quantum wells: Effective-mass measurements and offset effects

Cited by 62 publications

References 26 publications

Properties of photoexcited electrons and holes in undoped GaAs/AlGaAs QWs studied by classical cyclotron resonance

Properties of photoexcited electrons and holes in undoped GaAs/AlGaAs QWs studied by classical cyclotron resonance

Electron cyclotron mass in undopedCdTe∕CdMnTequantum wells

Internal Transitions of Charged Excitons in AlGaAs/GaAs Lateral Fluctuation Quantum Dots

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