Optically detected magnetic resonance and optically detected ENDOR of shallow indium donors in ZnO

Block, D.; Hervé, A.; Cox, R.T.

doi:10.1103/physrevb.25.6049

Cited by 99 publications

(57 citation statements)

References 12 publications

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“…The line width was 21 G considerably larger than in the earlier reports. In the same work first experimental evidence was given for the Ga donor [48,49], a similar interpretation was used quite recently [50] (see Fig. 8 for the EPR spectrum in a bulk ZnO sample with gallium as trace impurity).…”

Section: Magnetic Resonance Investigationsmentioning

confidence: 86%

“…Kasai concluded on the presence of halogen donors by a heat treatment of pure ZnO together with alkali halides [47]. In 1982 a first positive identification of a shallow donor in ZnO was reported by Gonzales et al [49] using ESR and ODMR (optically detected magnetic resonance). At very long delay times of the donor -acceptor pair recombination in ZnO:Li they detected a ten lines spectrum of the 115 In donor (confirmed by optically detected ENDOR).…”

Section: Magnetic Resonance Investigationsmentioning

confidence: 96%

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Bound exciton and donor–acceptor pair recombinations in ZnO

Meyer

Alves

Hofmann

et al. 2004

Physica Status Solidi (b)

1,608

153

1,169

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The optical properties of excitonic recombinations in bulk, n-type ZnO are investigated by photoluminescence (PL) and spatially resolved cathodoluminescence (CL) measurements. At liquid helium temperature in undoped crystals the neutral donor bound excitons dominate in the PL spectrum. Two electron satellite transitions (TES) of the donor bound excitons allow to determine the donor binding energies ranging from 46 to 73 meV. These results are in line with the temperature dependent Hall effect measurements. In the as-grown crystals a shallow donor with an activation energy of 30 meV controls the conductivity. Annealing annihilates this shallow donor which has a bound exciton recombination at 3.3628 eV. Correlated by magnetic resonance experiments we attribute this particular donor to hydrogen. The Al, Ga and In donor bound exciton recombinations are identified based on doping and diffusion experiments and using secondary ion mass spectroscopy. We give a special focus on the recombination around 3.333 eV, i.e. about 50 meV below the free exciton transition. From temperature dependent measurements one obtains a small thermal activation energy for the quenching of the luminescence of 10 ± 2 meV despite the large localization energy of 50 meV. Spatially resolved CL measurements show that the 3.333 eV lines are particularly strong at crystal irregularities and occur only at certain spots hence are not homogeneously distributed within the crystal contrary to the bound exciton recombinations. We attribute them to excitons bound to structural defects (Y-line defect) very common in II-VI semiconductors. For the bound exciton lines which seem to be correlated with Li and Na doping we offer a different interpretation. Li and Na do not introduce any shallow acceptor level in ZnO which otherwise should show up in donor -acceptor pair recombinations. Nitrogen creates a shallow acceptor level in ZnO. Donor -acceptor pair recombination with the 165 meV deep N-acceptor is found in nitrogen doped and implanted ZnO samples, respectively. In the best undoped samples excited rotational states of the donor bound excitons can be seen in low temperature PL measurements. At higher temperatures we also see the appearance of the excitons bound to the B-valence band, which are approximately 4.7 meV higher in energy.

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Section: Magnetic Resonance Investigationsmentioning

confidence: 86%

Section: Magnetic Resonance Investigationsmentioning

confidence: 96%

Bound exciton and donor–acceptor pair recombinations in ZnO

Meyer

Alves

Hofmann

et al. 2004

Physica Status Solidi (b)

1,608

153

1,169

View full text Add to dashboard Cite

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“…1.96 could originate from various shallow donor centers in the ZnO lattice. [32,[43][44][45] In the case presented here, only two alternatives for potential shallow donors have to be considered: interstitial Zn atoms and C atoms coordinated by oxygen in the carbonate mode. [32] Because the amount of the impurity atoms is expected to be in the ppm range, it is very difficult to track them by using elemental-analysis methods or crystallographic methods.…”

Section: Nontexture Effectsmentioning

confidence: 99%

Structure–Property–Function Relationships in Nanoscale Oxide Sensors: A Case Study Based on Zinc Oxide

Polarz

Roy

Lehmann

et al. 2007

Adv Funct Materials

107

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Chemical sensing on oxide sensors is a complex phenomenon involving catalytic activity as well as electronic properties. Thus, the properties of oxide sensors are highly sensitive towards structural changes. Effects like surface area, grain size, and, in addition, the occurrence of defects give separate contributions to the current. Structure–property–function relationships can be elucidated using a combination of state‐of‐the‐art analytical techniques. It is shown, that impurity atoms in the oxide lattice influence the performance of ZnO sensors more strongly than the other factors.

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“…The decrease in the concentration of neutral shallow donors, caused by the thermal anneal and observed in the EPR experiments, has been verified by recent Hall-effect measurements on similar ZnO samples, and the results will be reported in a later paper. In that study, we found that annealing a ZnO crystal in air at 750°C for 30 min decreased the room-temperature electron concentration from 1.0ϫ10 17 to 5.1ϫ10 16 cm Ϫ3 .…”

mentioning

confidence: 99%

Production of nitrogen acceptors in ZnO by thermal annealing

Garces

Giles

Halliburton

et al. 2002

Applied Physics Letters

200

107

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Nitrogen acceptors are formed when undoped single crystals of zinc oxide (ZnO) grown by the chemical-vapor transport method are annealed in air or nitrogen atmosphere at temperatures between 600 and 900 °C. After an anneal, an induced near-edge absorption band causes the crystals to appear yellow. Also, the concentration of neutral shallow donors, as monitored by electron paramagnetic resonance (EPR), is significantly reduced. A photoinduced EPR signal due to neutral nitrogen acceptors is observed when the annealed crystals are exposed to laser light (e.g., 364, 442, 458, or 514 nm) at low temperature. The nitrogens are initially in the nonparamagnetic singly ionized state (N−) in an annealed crystal, because of the large number of shallow donors, and the light converts a portion of them to the paramagnetic neutral acceptor state (N0).

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Optically detected magnetic resonance and optically detected ENDOR of shallow indium donors in ZnO

Cited by 99 publications

References 12 publications

Bound exciton and donor–acceptor pair recombinations in ZnO

Bound exciton and donor–acceptor pair recombinations in ZnO

Structure–Property–Function Relationships in Nanoscale Oxide Sensors: A Case Study Based on Zinc Oxide

Production of nitrogen acceptors in ZnO by thermal annealing

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