The luminescence spectrum of CdSe/CdS core-shell nanocrystals contains a dominant exciton band located at the CdSe core and an additional weak non-excitonic band, associated with trapped carriers. The present paper describes our efforts to identify the influence of CdSe/CdS interfaces on the localization of photogenerated species, utilizing optically detected magnetic spin and spinorbit resonance spectroscopy (ODMR). The spin resonance (SR) spectrum showed two resonance signals: the first associated with a trapped hole in a symmetric site within the core, and a second, corresponding to trapped electrons in an anisotropic interface defect site. The spin-orbit resonance (SOR) signal data are presented.
IntroductionNearly two decades of research have explored the benefits of the optical and opto-electronic properties of semiconductor nanocrystals [1]. These materials exhibit unique chemical and physical properties, differing substantially from those of the corresponding bulk solids. Evidently, these differences are associated with quantumsize effects. Moreover, several recent reports have described the development of coreshell type structures [2] in which an internal semiconductor nanocrystal is coated with an epitaxial layer of a different semiconductor. These structures have shown improvements in photoluminescence (PL) quantum yields and photo-oxidative stability, as compared with the core nanocrystals. For instance, the wide band gap (2.5 eV) of CdS and narrower band gap of CdSe (1.8 eV), cause a localization of electron and hole states within the CdSe core, in a similar manner to that of a quantum well structure. While the excitonic transitions in the CdSe/CdS core-shell samples have been investigated in the last few years [3], the understanding of interface influences on the optical properties has been neglected. Indeed, for crystals in such a small size regime, a large percentage of atoms is on/near the internal interfaces or the external surfaces. These sites may act as electron and hole traps. Thus, the present work describes our attempts to clarify the optical properties associated with trapped carriers.