Optically Encodable and Erasable Multilevel Nonvolatile Flexible Memory Device Based on Metal–Organic Frameworks

Abstract

Multilevel and flexible nonvolatile memory (NVM) is a promising candidate for data storage in next-generation devices but its high bias and low mobility of conducting channels are often its drawbacks. In this study, we demonstrate a low bias of smaller than 0.1 V and a high-mobility graphene layer as a conducting channel for flexible optoelectronic NVM based on a composite thin film of indium-based MOF-derived InCl 3 and 4,4-oxydiphthalic anhydride (odpta), Na[In 3 (odpt) 2 (OH) 2 (H 2 O) 2 ](H 2 O) 4 , and reduced graphene oxide (rGO). The optoelectronic NVM device can be encoded and erased optically by ultraviolet (UV) light and visible light, respectively. Our device also achieves memory states over 192 (6-bit storage) distinct levels, which can emerge as mass data storage. It also shows an excellent endurance of write−erase cycles under irradiation with a laser of varying wavelengths, the mechanical stability of more than 1000 bending cycles, and stable retention for longer than 10 000 s. These results open an alternative route for developing low bias and innovative optoelectronic technologies.

Porous crystalline materials for memories and neuromorphic computing systems

“…In these studies, only MOFs are developed for trapping the charge carriers under the V GS . 179,371 In 2022, Huang et al . reported a porphyrin MOF-based flash memory with BGTC device geometry utilizing pentacene and Cu-CTL NSs as semiconductor and FG materials, respectively.…”

“…In these studies, only MOFs are developed for trapping the charge carriers under the V GS . 179,371 In 2022, Huang et al reported a porphyrin MOFbased flash memory with BGTC device geometry utilizing pentacene and Cu-CTL NSs as semiconductor and FG materials, respectively. 179 The Cu-CTL NSs were synthesized via template method using Cu 2+ and TCPP as metal nodes and organic ligand, respectively (Fig.…”

“…Recently, Chen et al prepared a flexible optoelectronic nonvolatile memory with BGTC device geometry by using In-MOF/rGO, single layer graphene (SLG), and Ag as photosensitive/charge trapping, semiconductor channel, and S/D electrode respectively. 371 Before the wet transfer process of SLG, the substrate was modified by OTS to increase its hydrophobicity, which can effectively inhibit hole doping and improve the current ratio of photocurrent to dark, thus facilitating multilevel data storage. The In-MOF was synthesized via a hydrothermal reaction between ODPTA and InCl 3 (Fig.…”

2D Heterostructures Induced Charge Transfer and Trapping for Hybrid Optically and Electrically Controllable Nonvolatile Memory

“…Therefore, nonvolatile memory has become one of the novel technologies for next-generation data storage due to its advantages of fast switching speed, nonvolatility, multilevel storage, low power consumption, and simple structure. [1][2][3][4] There is a wide range of memory types have been developed, including electrical, optical, magnetic, and others. [5][6][7][8][9] In addition to improving the efficiency of nonvolatile memory, it also requires additional functions to be presented in the next-generation technology.…”

Development of Multifunctional Nano-Graphene-Grafted Polyester to Enhance Thermal Insulation and Performance of Modified Polyesters

“…The combination of graphene with polymer exhibits various applications because graphene has unique properties such as good electrical conductivity, chemical stability, and high surface area. The graphene oxide/reduced graphene oxide nanomaterials also have significant applications such as nanosensors, optoelectronic devices, and electrochemical devices [15][16][17][18][19]. The grapheneoxide-coated fabrics for thermal conductivity purposes were also reported [20].…”