Optically‐Induced Diffusion and Dissolution of Metals in Amorphous Chalcogenides

Wágner, T.; Frumar, M.

doi:10.1002/9783527602544.ch10

Cited by 15 publications

(5 citation statements)

References 77 publications

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“…For instance, in the particular case of a Ge-content of 10 at.%, E opt g decreases from 1.97 down to 1.67 eV, when the Agconcentration in the sample increases from zero up to the maximum value corresponding to the smallest Ge-content, 7.6 at.%. This fact could be explained if we consider that, as the silver is photodoped, it, acting as a cation, joins mainly S atoms: the incorporation of silver into the structure of the Ge-Sb-S alloys is expected to produce preferentially the breaking of S-S homopolar bonds, belonging to S 8 -rings or S-ring fragments, and Ge-S heteropolar bonds, belonging to edgesharing-type GeS 4/2 structural units [12]. Interestingly, the existing pyramidal SbS 3/2 structural units presumably will not be destroyed, as the Ag is photodissolved.…”

Section: Discussionmentioning

confidence: 99%

“…Optically-induced dissolution and diffusion of some metals (Ag, Cu, Zn, and Cd), in amorphous chalcogenides, has been extensively investigated by many authors [7][8][9][10][11][12] and has not been fully explained as yet. Understanding the kinetics of the photodoping process, and finding new, suitable host glass-matrices, is, indeed, a crucial point for all technological applications.…”

Section: Introductionmentioning

confidence: 99%

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Preparation and optical dispersion and absorption of Ag-photodoped Ge_xSb_40−xS₆₀(x= 10, 20 and 30) chalcogenide glass thin films

Márquez¹,

González-Leal²,

Bernal-Oliva³

et al. 2007

J. Phys. D: Appl. Phys.

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We have analysed the effect of silver content on the optical properties of Ag-photodoped amorphous GexSb40−xS60 (with x = 10, 20 and 30 at.%) chalcogenide thin films; the chalcogenide host layers were prepared by vacuum thermal evaporation. Films of composition Agy(GexSb40−xS60)100−y, with y ≲ 10 at.%, were prepared by successively photodissolving about 10 nm thick layers of silver. The film thickness and optical constants have been accurately determined by a refined envelope method, based upon the two envelope curves of the optical-transmission spectrum, obtained at normal incidence. The dispersion of the linear refractive index of the Ag-photodoped chalcogenide films is analysed in terms of the Wemple–DiDomenico single-effective-oscillator model. We have found that the maximum change in the index of refraction, between the Ag-photodoped and the undoped material, is about 0.08, when the Ag-concentration reaches the level of saturation of around 10 at.%. On the other hand, the Tauc gap, , decreases notably, with increasing Ag-content: for instance, in the particular case of x = 10 at.%, the smallest Ge-content, decreases from 1.97 down to 1.67 eV.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Preparation and optical dispersion and absorption of Ag-photodoped Ge_xSb_40−xS₆₀(x= 10, 20 and 30) chalcogenide glass thin films

Márquez¹,

González-Leal²,

Bernal-Oliva³

et al. 2007

J. Phys. D: Appl. Phys.

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“…8 Generally, Ag can be incorporated into chalcogenide glasses either by diffusing the metal into the chalcogenide film using light irradiation, 9 or by directly melting the metal into the glass network. 10 Considerable attention has been devoted to understanding the photo-doping mechanism and the process parameters of photo-induced dissolution and diffusion of Ag in bilayer structures of Ag/chalcogenide, [11][12][13] but peculiarities about the interaction between the doping metal atoms and the glass network, particularly the local structure of the doping atoms and their effect on glass properties, are less well-investigated.…”

Section: Introductionmentioning

confidence: 99%

PROPERTIES AND STRUCTURE OF Ag-DOPED As₂Se₃ GLASSES

Zha

Smith

Prasad

et al. 2007

J. Nonlinear Optic. Phys. Mat.

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Ag-doped As 2 Se 3 glasses were prepared by the melt-quenching method and the influence of silver doping on the glass structure and optical properties was studied using Raman and UV-Vis-IR spectroscopy and differential scanning calorimetry. For Ag concentrations less than 15 at%, introduction of Ag into As 2 Se 3 glasses mainly leads to the formation of Ag-Se covalent bonds, resulting in destruction of the glass network. This manifests itself by a decrease in the glass transition temperature and low frequency shifts in the As-Se Raman band. When the Ag concentration was higher than 25 at%, some Ag atoms exist in the glass matrix as coordinative bonds, resulting in a slight increase in the glass transition temperature and high frequency shifts in the Raman peaks. The relationship between the glass structure and properties is discussed.

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“…Glassy chalcogenide semiconductors show a wide variety of light induced phenomena such as photodarkening, photobleaching, photo-polymerization, photodoping, etc. [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…In the photodoping phenomenon, illumination induces the dissolution of metals such as Ag into glassy chalcogenide semiconductors. Despite the extensive studies [1][2][3][4][5] performed after its discovery [6], theory concerning the microscopic mechanism of photodoping has not yet received general acceptance.…”

Section: Introductionmentioning

confidence: 99%

Electromigration statistics and damage evolution for Pb-free solder joints with Cu and Ni UBM in plastic flip-chip packages

Chae

Zhang

et al. 2006

J Mater Sci: Mater Electron

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By analyzing the composition dependence of the total amount of Ag photodissolved into amorphous GexS1-x and the fragility of GexS1-x, it is found that at the composition where the amount of Ag photodissolved exhibits a maximum, the fragility shows a minimum, that is, there is an inverse correlation between these two quantities.The possible origin of the correlation found has been discussed by using the constraint theory and the model of fragility proposed by one of the authors.

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Optically‐Induced Diffusion and Dissolution of Metals in Amorphous Chalcogenides

Cited by 15 publications

References 77 publications

Preparation and optical dispersion and absorption of Ag-photodoped Ge_xSb_40−xS₆₀(x= 10, 20 and 30) chalcogenide glass thin films

Preparation and optical dispersion and absorption of Ag-photodoped Ge_xSb_40−xS₆₀(x= 10, 20 and 30) chalcogenide glass thin films

PROPERTIES AND STRUCTURE OF Ag-DOPED As₂Se₃ GLASSES

Electromigration statistics and damage evolution for Pb-free solder joints with Cu and Ni UBM in plastic flip-chip packages

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Optically‐Induced Diffusion and Dissolution of Metals in Amorphous Chalcogenides

Cited by 15 publications

References 77 publications

Preparation and optical dispersion and absorption of Ag-photodoped GexSb40−xS60(x= 10, 20 and 30) chalcogenide glass thin films

Preparation and optical dispersion and absorption of Ag-photodoped GexSb40−xS60(x= 10, 20 and 30) chalcogenide glass thin films

PROPERTIES AND STRUCTURE OF Ag-DOPED As2Se3 GLASSES

Electromigration statistics and damage evolution for Pb-free solder joints with Cu and Ni UBM in plastic flip-chip packages

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About

Preparation and optical dispersion and absorption of Ag-photodoped Ge_xSb_40−xS₆₀(x= 10, 20 and 30) chalcogenide glass thin films

Preparation and optical dispersion and absorption of Ag-photodoped Ge_xSb_40−xS₆₀(x= 10, 20 and 30) chalcogenide glass thin films

PROPERTIES AND STRUCTURE OF Ag-DOPED As₂Se₃ GLASSES