Optically induced electric-field domains by bound-to-continuum transitions in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-type multiple quantum wells

Schneider, Harald; Mermelstein, C.; Rehm, Robert; Schönbein, C.; Sa’ar, A.; Walther, M.

doi:10.1103/physrevb.57.r15096

Cited by 28 publications

(22 citation statements)

References 17 publications

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“…18 Some features of the QWIP characteristics were attributed to the occurrence of high-and low-field domains. 19 Very recently the formation of periodic electric-field and charge domains in QW structures excited by infrared radiation has been predicted in our Monte Carlo ͑MC͒ simulations. 26,27 As it has been shown, contrary to the previous assumptions that the electric-field distributions, even being nonuniform, are relatively smooth and monotonic, stable periodic electric-field structures with a period equal to twice the spacing between QW's can occur.…”

Section: Introductionmentioning

confidence: 72%

“…1 Several physical models using both analytical and numerical simulation approaches have been proposed for steady-state and transient operation of QWIP's. [12][13][14][15][16][17][18][19][20][21][22][23][24][25] Early models of QWIP's with multiple QW's assumed that the electric-field distribution in the active region is uniform. 12,13 Later, it has been shown that the space charge gives rise to the nonuniformity of the electric field either near the emitter contact 15,17,[19][20][21] or spread across the whole structure.…”

Section: Introductionmentioning

confidence: 99%

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Nonlinear dynamics of recharging processes in multiple quantum well structures excited by infrared radiation

Ryzhii

2000

Phys. Rev. B

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We study the spatiotemporal variations of electric-field distributions in multiple quantum well structures excited by infrared radiation due to bound-to-continuum electron transitions using ensemble Monte Carlo particle simulations. The occurrence of self-sustained pulsing and the formation of spatially periodic electricfield domains with weakly oscillating amplitudes demonstrated in the simulations are associated with the excitation of the recharging waves. It is shown that the dynamics of electric-field distributions and photocurrent can be different in the structures with even and odd numbers of quantum wells.

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Section: Introductionmentioning

confidence: 72%

Section: Introductionmentioning

confidence: 99%

Nonlinear dynamics of recharging processes in multiple quantum well structures excited by infrared radiation

Ryzhii

2000

Phys. Rev. B

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“…Such negative differential bias voltage behavior of the gain is caused by a reduced mean drift length ᐉ d at high electric fields due to intervalley scattering. 8 The monotonous behavior of the gain in the InGaAs/GaAs QWIPs studied here is due to larger energy differences between the conduction band minima, such that intervalley scattering occurs at much higher electric fields. Therefore, InGaAs/GaAs QWIPs show a higher mean drift length of charge carriers at high electric fields and thus a higher gain g than GaAs/AlGaAs QWIPs.…”

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confidence: 81%

Electron transport studies on In0.30Ga0.70As/GaAs-quantum-well infrared photodetectors using time-resolved photocurrent measurements

Steinkogler

Schneider

Rehm

et al. 2002

Applied Physics Letters

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“…Moreover, in n-type QWs a pronounced current plateau appears in the I-V curves at intermediate voltages under 1000K block body illumination. Deviations from the exponential behavior of the I−V characteristics in n-type quantum wells have been previously associated with gain changes, tunneling effects, and appearance of negative differential resistance [17,18]. …”

Section: I-v Characteristicsmentioning

confidence: 98%

Non-Gaussian noise in quantum wells

Simón

Paltiel²,

Jung

et al. 2007

SPIE Proceedings

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Gaussian generation-recombination is accepted to be a dominant mechanism of current noise source in quantum well systems biased by electric field normal to the layers. Recent experiments in n-type and p-type multiple quantum wells have revealed an additional pronouncedly non-Gaussian excess current noise with a low cut-off frequency in the kHz range. The non-Gaussian noise has been attributed to metastable spatial configurations of electric field. The metastability is originating from negative differential conductance caused by intervalley scattering in n-type wells and heavy and light holes tunneling in ptype wells. At a constant bias the system randomly switches between high resistivity state with low current flow and low resistive state with high current. The non-Gaussianity of the noise is more pronounced in p-type wells where the time traces of current fluctuations resemble closely two-level random telegraph signal. In n-type wells the telegraph-like fluctuations have not been straightforwardly observed. The non-Gaussianity of the noise in n-type systems has been revealed by nonzero skewness. The differences between noise properties of between n-and p-type systems have been attributed to small capture probability of electrons in n-type wells, as opposed to very high capture probability of holes in p-type wells. As a consequence the noise of any p-type multi-well system is dominated by the tunneling from the wells while in the n-type the noise appears as a superposition of many fluctuators associated with individual wells

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Optically induced electric-field domains by bound-to-continuum transitions inn-type multiple quantum wells

Cited by 28 publications

References 17 publications

Nonlinear dynamics of recharging processes in multiple quantum well structures excited by infrared radiation

Nonlinear dynamics of recharging processes in multiple quantum well structures excited by infrared radiation

Electron transport studies on In0.30Ga0.70As/GaAs-quantum-well infrared photodetectors using time-resolved photocurrent measurements

Non-Gaussian noise in quantum wells

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