Optically Induced Localized Paramagnetic States in Chalcogenide Glasses

Bishop, S. G.; Strom, U.; Taylor, P. C.

doi:10.1103/physrevlett.34.1346

Cited by 198 publications

(39 citation statements)

References 7 publications

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“…It was only seen around the As atoms, while the Se atoms strictly keep this rule. This experimental result could be confirmed by an ab initio MD simulation, where the dynamic properties such as the lifetime of the fourfold coordinated As atoms, i.e., a flickering motion of the As-As bonds around the fourfold coordinated As atoms, were discussed together with the corresponding electronic natures, which do not contradict the results of ESR [21] and NMR [22] measurements. The general picture of the averagely over-coordinated As atoms is valid in the As 2 Se 3 glass, and no crucial failures were found against this conclusion at present as discussed in this paper in detail.…”

supporting

confidence: 66%

Does the 8-N bonding rule break down in As ₂ Se ₃ glass?

Hosokawa¹,

Koura²,

Bérar³

et al. 2013

EPL

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-The local coordination numbers of As2Se3 glass were determined by a combination of anomalous x-ray scattering experiments, reverse Monte Carlo calculations, and ab initio molecular dynamics simulations. The well-known '8-N bonding rule' proposed by Mott breaks down around the As atoms, exceeding the rule by 7-26%. An experimental prediction based on mean-field theory agrees with the present experimental and theoretical results. The fourfold coordinated As atoms likely form As-As wrong bond chains rather than ethan-like configurations, which is identified as the origin for the breakdown of the '8-N bonding rule'.

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supporting

confidence: 66%

Does the 8-N bonding rule break down in As ₂ Se ₃ glass?

Hosokawa¹,

Koura²,

Bérar³

et al. 2013

EPL

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“…No epr signal is observed optical absorption edge in apparently high-at (I4) and no Curie term appears quality amorphous samples has been observed in the magnetic susceptibility (15). However, to be as sharp as in the crystals (4,5), while in l5 K 3 an epr be induced by the chalcogenide and pnictide glasses, a cornwith photons of frequency of the edges is masked by the so-called 'lightly below the band gap of the material (16). Urbach tails in both amorphous (6) and crystal-The u n~a i r e d -s~i n density is of the line (7) systems.…”

Section: Experimental Results On Covalentmentioning

confidence: 99%

Localized electronic states in amorphous semiconductors

Adler¹,

Yoffa²

1977

Can. J. Chem.

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AVID A~~~~ and ELLEN 3. YOFFA. Can. j. Chern. 95. I920 (1977). The experimental results pertaining to the electronic structure of covaient amcrphoi~s semiconductors are briefly reviewed. It is found that three classes of materials exist, depending on the lowest-energy coordinatiofi of the predominant cheinicai component. In each case, the iransport properties are ordinarily conirolled by the Iocalized states in the gap resulting froin the minimum-mergy defect sites, in which the local coordination is not optimal for certain atoms. These :ocalized states are treated in terms of a Hubbard inodei, in whish the effective repulsion between two electrons simuitaneously resent on the same center is taken as positive for tetrahedrally bonded solids and negative for chaisogenide and pniciide glasses. The electronic struclure is discussed in detail. lt is shown that even such a simple model can account for almost ail of the experimental properties of the major classes of amorphoiis semiconductors. Chem. 55. i920 (1977). On passe brievement en revue ies rCsu1tats exptrimentaux se rapportant a la structure tlecironique de serniconducte~!rs amorphes covalents. On a trouvi qu'il existe trois classes de n-iateriaux en fonction de l'knergie ia plus basse ae coordination pour le compose chirnique ?rtdominant. Dans chaque cas, ies proprietts de transport sont ordinairenlent controiees par des ktats Iocalists dans le fcsse resultant des sites de dkfauts d'energie minimum dans iesquels la coordination locale n'est pas optimaie pour ccrtains atcmes. On traitc ccs crats localisks en terrnes du modeie de Hi~bbard dans Zequel ia rkpuision efictive entre deux electrons presents d'iine facon simultanee sur le mEme centre est considtree comme positive pour les solides lies d"une facon tetraedrique et negative pour les verres chaicogknides et pnictides. 0 1 7 discute en iiitail de la structure electronique. On montre que mime un rnodile aussi sinlple peut rendre cornpie de pratiquement routes les proprietis expirimentales des classes majeurs des semi canducteurs amorphes.[ progress in Llnderstandiiag the,r eiectrcnic These inciude not only the Group %V atoms: such bas coilreAs is -the case hr the as Ge a116 Si, but also the Grocp i 11-V materials. corresponciing crSrstzlline solids. both suchas GaAs, and Inore cornpiex solids with an and icllis anorphous exist (1). a""' "' %"aIence of fol~r: such as cdGeAs2. Because onlly *he former materials have been 'ntermedlate beiween these tlvo major ciasses suficientiy physical be-are 'he pt7ictideies: which contaii~ predominantly havior can be understood iia some detail, we the Group V atoms, Sb, As, or P.shall concentrate on them in this paper.in this paper, we analyze ":he experimentalThree major of covaient amorphous resuitson these main groups of covalent amorsolids be differentiated, depending on the phous se~l~isofiductor~. znd sun?.rnasize a mode! chemical of the constituent F r their eiectronic structure which appears to a,ecms. the most intensively inveseigated 5 e i i 1 a " g e a n e n t ...

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“…This kind of variation in optical energy band gap and electrical conductivity arise due to the existence of a large number of impurity levels and geminate traps of electron−hole pairs in the forbidden gap of glassy materials [123,124]. The existence of a large number of close impu− rity levels in a forbidden gap makes it easy for photons to jump from one metastable energy level to another [125][126][127][128] and trap electron−hole pairs produced more electronic con− duction centres. Collectively, these impurity levels of pho− tons required very less amount of energy for optical excita− tion and trap electron−hole pairs electronic centres allow an easier path for conduction.…”

Section: Optical Energy Band Gap and Electrical Conductivity With Strmentioning

confidence: 99%

Recent advancement in metal containing multicomponent chalcogenide glasses

Singh

2012

Opto-Electronics Review

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Amorphous semiconductors or chalcogenide glasses are the key materials in modern optoelectronics to make comfortable life of our society. Understanding of physical properties (like microstructure, thermal, optical, electrical) of these materials is important for their different uses. Predominant study of physical properties of the metal containing multicomponent chalcogenide glasses have attracted much attention, due to their interesting variable features and wide range of structural network modifications. Structural modifications in these materials are usually described with respect to the values of structural units (or average coordination number). In significance to this, the present work demonstrates the chronological development in the field of chalcogenide glasses along with scanning electron microscopy (SEM) morphologies. Optical, electrical and thermal correlative properties of recent developed Se93−xZn2Te5Inx (0 ≤ x ≤ 10) metallic multicomponent chalcogenide glasses are discussed. Variation in SEM morphology, refractive index (n), extinction coefficient (K), optical energy band gap (Eg), electrical conductivity (σav), crystallization activation energy (Ec) and glass forming ability (GFA) with structural units of Se-Zn-Te-In glasses have been demonstrated in this study. Subjected materials thermal, optical and electrical parameters have been achieved higher and lower in a respective manner at the threshold structural unit value 〈r〉.

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Optically Induced Localized Paramagnetic States in Chalcogenide Glasses

Cited by 198 publications

References 7 publications

Does the 8-N bonding rule break down in As ₂ Se ₃ glass?

Does the 8-N bonding rule break down in As ₂ Se ₃ glass?

Localized electronic states in amorphous semiconductors

Recent advancement in metal containing multicomponent chalcogenide glasses

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Optically Induced Localized Paramagnetic States in Chalcogenide Glasses

Cited by 198 publications

References 7 publications

Does the 8-N bonding rule break down in As 2 Se 3 glass?

Does the 8-N bonding rule break down in As 2 Se 3 glass?

Localized electronic states in amorphous semiconductors

Recent advancement in metal containing multicomponent chalcogenide glasses

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Product

Resources

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Does the 8-N bonding rule break down in As ₂ Se ₃ glass?

Does the 8-N bonding rule break down in As ₂ Se ₃ glass?