Optically induced series resistance and microwave properties of n ++np++ X band Si IMPATT diode

Abstract

The effect of optically generated reverse saturation current on the series resistance and negative resistance properties of single drift region (n ++ np ++) X band Si IMPATT diodes under (i) punch through, (ii) exact and (iii) undepleted field distributions have been studied. Simulation following Gummel-Blue approach [1] indicates an overall degradation of microwave properties with an increase of series resistance due to enhancement of illuminated leakage current.