Optically induced suppression of spin relaxation in two-dimensional electron systems with Rashba interaction

Pershin, Yuriy V.

doi:10.1103/physrevb.75.165320

Cited by 10 publications

(15 citation statements)

References 41 publications

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“…Hence a spin-echo at a time scale comparable to or smaller than the momentum scattering time τ p can efficiently suppress the D'yakonov-Perel' spin relaxation. Such a proposal was given in a recent work by Pershin [348]. In most cases the system is in the strong scattering regime.…”

Section: D'yakonov-perel' Mechanismmentioning

confidence: 95%

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Spin dynamics in semiconductors

2010

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This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published in Physics Reports

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Section: D'yakonov-perel' Mechanismmentioning

confidence: 95%

“…This inhomogeneous broadening can be removed by spin echo [348]. As pointed out by Wu and co-workers, the irreversible spin dephasing can be obtained from the decay of the incoherently summed spin coherence [334,336,349,350], similar to that in optical dephasing.…”

Section: Ensemble Spin Relaxation and Spin Dephasing: A Simple Modelmentioning

confidence: 97%

Spin dynamics in semiconductors

2010

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“…(10) and (11), and Eq. (18) reduces to (19) where N (x) returns the integer part of x. We plot τ s as a function of ε F and relate it to the corresponding N 2d in Fig.…”

Section: A Without External Stressmentioning

confidence: 99%

“…by impurities or phonons) in the presence of Rashba/Dresselhaus effect, their spins precess randomly over time and relax [15]. This D'yakonov-Perel' (DP) process has been the only main spin relaxation mechanism studied so far in Si 2DEG [16][17][18][19][20]. This has led to the general belief, questioned in the current work, that the DP mechanism is the only spin relaxing mechanism in Si 2DEG that needs to be considered theoretically.…”

Section: Introductionmentioning

confidence: 99%

Impurity-Driven Two-Dimensional Spin Relaxation Induced by Intervalley Spin-Flip Scattering in Silicon

Song

Sarma

2017

Phys. Rev. Applied

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Through the theoretical study of electron spin lifetime in the two-dimensional electron gas (2DEG) confined near the surface of doped Si, we highlight a dominant spin relaxation mechanism induced by the impurity central-cell potential near an interface via intervalley electron scattering. At low temperatures and with modest doping, this Yafet spin flip mechanism can become more important than the D'yakonov-Perel' spin relaxation arising from the structural Rashba or Dresselhaus spinorbit coupling field. As the leading-order impurity-induced spin flip happens only between two non-opposite valleys in Si, 2DEG systems in Si MOSFETs or SiGe heterostructures are a natural platform to test and utilize this spin relaxation mechanism due to the valley splitting near the interface and the tunability by electrical gating or applied stress. Our proposed new spin relaxation mechanism may explain a part of the spin relaxation contribution to Si-based 2DEG systems, and should have spintronic applications in Si-based devices.

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“…The D'yakonov-Perel' 1,2 spin relaxation mechanism in two-dimensional (2D) systems has attracted wide attention [1][2][3][4][5][6][7][8][9][10][11][12][13][14] because of its fundamental importance for the field of spintronics. 15,16 However, the spin relaxation in systems with boundaries is even more important because boundaries are naturally present in all electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Dynamics of spin relaxation in finite-size two-dimensional systems: An exact solution

Slipko

Pershin

2011

Phys. Rev. B

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We find an exact solution for the problem of electron spin relaxation in a two-dimensional (2D) circle with Rashba spin-orbit interaction. Our analysis shows that the spin relaxation in finite-size regions involves three stages and is described by multiple spin relaxation times. It is important that the longest spin relaxation time increases with the decrease in system radius but always remains finite. Therefore, at long times, the spin polarization in small 2D systems decays exponentially with a size-dependent rate. This prediction is supported by results of Monte Carlo simulations.

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Optically induced suppression of spin relaxation in two-dimensional electron systems with Rashba interaction

Cited by 10 publications

References 41 publications

Spin dynamics in semiconductors

Spin dynamics in semiconductors

Impurity-Driven Two-Dimensional Spin Relaxation Induced by Intervalley Spin-Flip Scattering in Silicon

Dynamics of spin relaxation in finite-size two-dimensional systems: An exact solution

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