Optically pumped GaAs surface-emitting laser with integrated Bragg reflector

Faist, J.; Morier‐Genoud, F.; Martin, D.; Ganière, Jean‐Daniel; Reinhart, F. K.

doi:10.1049/el:19880426

Cited by 27 publications

(4 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(7) we obtain f'rom Eq. (13) in the stationary case 2 A, + -, np(r) D "(r,r', ur) Co P" (r-,~) D"' (r, r', u) = b(rr'), (15) where np(r) describes the refractive index of the unexcited laser structure. A design example for a VCSEL with dielectric mirrors is shown in the bottom part of the re&active index is again constant and unity outside the laser structure.…”

Section: Stationary Solutionsmentioning

confidence: 99%

See 1 more Smart Citation

Many-body theory for semiconductor microcavity lasers

Jahnke

Koch

1995

Phys. Rev. A

View full text Add to dashboard Cite

The in8uence of many-body, nonequilibrium, and cavity efFects on the emission characteristics and carrier dynamics of semiconductor microcavity lasers is investigated. The nonlinear coupled equations for the carrier kinetics and the laser dynamics are derived. Numerical solutions for vertical cavity surface emitting lasers show that the electron-hole plasma population has strong nonequilibrium character under many realistic conditions, exhibiting plasma heating and/or kinetic hole burning. It is shown that the desired threshold reduction through increased spontaneous emission coupling is accompanied by a significant increase in the laser linewidth and deviations from the usual Schawlow-Townes line narrowing. Assuming optical excitation with femtosecond pulses, the delayed onset of laser action and the dynamical emission characteristics are computed. PACS number(s): 42.55.Px, 42.60.3f I. INTR, ODU CTION The development of high-quality resonators allows sig-ni6cant modifications of the photon density of states (DOS) in optical systems [1 -3]. These changes are re-Hected in many system properties which depend on the spontaneous or stimulated transitions.Soon after the prediction of altered spontaneous transitions of nuclear magnetic moments at radio &equencies [4], modified spontaneous transitions between atomic levels in the presence of mirrors have been discussed [5]. In a first experiment [6] small alterations of the fluorescence of a molecule under the inHuence of a single conducting surface have been observed. During the 1980s enhanced and inhibited spontaneous emission by Rydberg atoms in highly conducting metallic microwave cavities [7] have been demonstrated. Inhibited spontaneous emission of cyclotron radiation by an electron in a Penning trap [8] has been found and applications in the micromaser [9] have been shown. Generally, the spontaneous emission is inhibited (enhanced) if the corresponding modes of the radiated field are suppressed (supported) by means of a cavity. The effect becomes significant for high-quality cavities with a cavity volume on the order of the cubic wavelength.Recently, the development of semiconductor nanostructures opened the possibility to modify the spontaneous lifetime of excited elections and holes [10 -12]. As an application in laser devices the enhancement of spontaneous emission into the laser mode and the simultaneous reduction of spontaneous emission into nonlasing modes can be used to reduce the "nonlasing" deexcitation of the system and therefore to lower the laser threshold, see, e.g. , Ref.[13].Semiconductor microresonators make it possible to design a mode structure with nearly ideal single mode operation. These devices exhibit greatly improved emission properties in comparison to conventional semiconductor lasers. The two most successful structures of such semiconductor microlasers are the vertical cavity surface emitting lasers (VCSEL) [14 -19] and the microdisk lasers [20]. These novel devices make it possible to experimentally investigate the inHuence of a modif...

show abstract

Section: Stationary Solutionsmentioning

confidence: 99%

“…Inserting Eqs. (15), (19), and (29) in (27) for rq --r~(within the active region) we obtain Ren (ri,~, t)dry iF(ri, rg, (u, t)l d (rg,~, t) oct = -[N (ur, t) F ' (ri, ri, u, t) -¹ (u, t) F (ri, ri,~, t)) d (ri, (u, t) F(ri, ri,~, t) F*(ri, ri, (u, t) (…”

Section: Dynamical Behavior and Kinetic Equationmentioning

confidence: 99%

Many-body theory for semiconductor microcavity lasers

Jahnke

Koch

1995

Phys. Rev. A

View full text Add to dashboard Cite

show abstract

“…Additional advantages of such Bragg reflectors are that they improve the mirror-active layer interface quality and facilitate thermal dissipation, as these materials have a good thermal conductivity. Since laser emission has been recently reported [6] on optically-pumped similar structures, this also defines a generic type of devices that could share the same technology and fulfil various functions in optical processing. We have recently reported results on an ttalon consisting of GaAsfAlAs Bragg reflectors and a GaAs active medium that displayed very low (4 mW) threshold powers at 880 nm [l].…”

Section: Introductionmentioning

confidence: 99%

Optical Nonlinearities of GaAs‐Based Epitaxial Structures for All‐Optical Switching

Oudar¹,

Sfez²,

Kuszelewicz³

et al. 1990

Physica Status Solidi (b)

View full text Add to dashboard Cite

An experimental study is made of GaAs/AlGaAs monolithic bistable etalons fabricated by metalorganic vapor-phase epitaxy. Optical bistability is observed in the reflective mode, with a minimum threshold power of less than 3 mW and a switching contrast as high as 30: 1, with a cavity resonator designed to achieve simultaneously a high finesse and a high reflectivity contrast. The dispersive optical nonlinearity of the multiple quantum well active medium is measured as a function of the intracavity intensity, and a strong saturation behavior is observed. The origin of this saturation and its implication on the design of future devices is discussed briefly.On decrit les rksultats d'une etude experimentale du regime bistable de cavites monolithiques en GaAs/AlGaAs fabriquees par epitaxie organo-metallique. La bistabilite optique a t t t observee en reflection, avec un seuil en puissance inferieur a 3 mW et un contraste de commutation de 30 : 1, avec des paramttres de cavite spkcialement etudies pour obtenir simultanement une grande finesse et un contraste eleve en reflection. La non-linearite optique dispersive des puits quantiques multiples constituant la couche active a ete mesuree en fonction de l'intensite intracavite, mettant en evidence une saturation marquee a haute intensite. L'origine de cette saturation est brievement discutee, ainsi que son incidence sur la conception de futurs dispositifs.

show abstract

“…Surface-emitting semiconductor lasers [1][2][3][4][5][6][7][8] have attracted significant attention for development of high-power laser arrays, highly parallel optical interconnections, and spatially coherent sources for free-space illumination, communication and ranging. Vertical cavity surface-emitting structures are especially promising because of their relative simplicity compared with other surface-emitting lasers which use gratings or mirrors to turn the output from horizontal (in-plane) active regions into the vertical direction.…”

Section: Introductionmentioning

confidence: 99%

Mode stability and spectral properties of resonant periodic gain surface-emitting lasers

Mahbobzadeh¹,

Raja²,

McInerney³

et al. 1990

SPIE Proceedings

View full text Add to dashboard Cite

Use of resonant periodic gain media provides enhanced gain for a specific design wavelength and propagation direction. Here we describe the modal properties and emission spectra of CW optically pumped GaAs/A1GaAs resonant periodic gain surfaceemitting lasers as functions of pump power, and for small temperature variations in the vicinity of 300 K. We consider in detail the achievement of fundamental transverse mode operation and hence narrow spectral widths.

show abstract

Optically pumped GaAs surface-emitting laser with integrated Bragg reflector

Cited by 27 publications

References 1 publication

Many-body theory for semiconductor microcavity lasers

Many-body theory for semiconductor microcavity lasers

Optical Nonlinearities of GaAs‐Based Epitaxial Structures for All‐Optical Switching

Mode stability and spectral properties of resonant periodic gain surface-emitting lasers

Contact Info

Product

Resources

About