Optically‐pumped lasing of semi‐polar InGaN/GaN(1122) heterostructures

Strittmatter, A.; Teepe, Mark; Yang, Zhihong; Chua, C.L.; Northrup, John E.; Johnson, N. M.; Spiberg, P.; Brown, Rfc; Ivantsov, V.; Syrkin, A. L.; Shapovalov, Lisa; Usikov, A.

doi:10.1002/pssc.200983557

Cited by 6 publications

(7 citation statements)

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“…(1122) heterostructures A variety of growth experiments were conducted to proof the utility of semi-polar GaN(1122)/sapphire templates for application in light emitting diodes and LDs for the visible spectral range. Initial growth experiments established proper growth conditions for homo-epitaxial growth of GaN layers [41]. After GaN buffer growth a slight improvement of the surface roughness to 5-7 nm rms is observed.…”

Section: Resultsmentioning

confidence: 99%

“…C-plane laser heterostructures with emission wavelengths up to 430 nm, and exhibiting threshold pump power densities below 200 kW/cm 2 , were routinely obtained on GaN/sapphire templates as well as on bulk GaN substrates [41]. As a benchmark, similar InGaN/GaN quantum well structures were embedded into broad-area LDs, and consistently showed pulsed lasing with threshold current densities <10 kA/cm 2 .…”

Section: à3mentioning

confidence: 99%

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Semi‐polar nitride surfaces and heterostructures

Strittmatter

Northrup

Johnson

et al. 2010

Physica Status Solidi (b)

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This paper reviews semi-polar GaN surfaces, of interest for light emitting devices, from both theoretical and experimental perspectives. Theoretical results on polarization charges at InGaN/GaN heterointerfaces and In incorporation into InGaN films are presented for polar (0001), semi-polar (1122) and nonpolar (1100) surfaces. Specific features of semi-polar InGaN/ GaN structures are emphasized which can be beneficial for improving optical and transport properties of quantum-wellbased light emitting devices. The analysis favours semi-polar surfaces such as the (1122) surface as growth plane for longwavelength light emitters. Therefore, the experimental sections emphasize progress towards long-wavelength LEDs and lasers by growth of InGaN/AlGaN/GaN(1122) heterostructures on large-area GaN(1122)/m-sapphire templates. The current status of such templates as grown by hydride vapour phase epitaxy is presented. The implementation of an epitaxial lateral overgrowth method on such templates to improve device performances is demonstrated.

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Section: Resultsmentioning

confidence: 99%

Section: à3mentioning

confidence: 99%

Semi‐polar nitride surfaces and heterostructures

Strittmatter

Northrup

Johnson

et al. 2010

Physica Status Solidi (b)

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“…However, taking into account aggregate results of the above analysis, we have decided to choose the (1122) InGaN/GaN LEDs. Efficient long-wavelength emission of these devices has been also reported many times (see, e.g., [23][24][25][26][27]) and their structures seem to have currently more perspective advantages as green emitters [28] among reported orientations to date. In particular, expected highpower green (516 nm) emission has been reported by Sato et al [29] from the InGaN/GaN multi-quantum-well LED manufactured on the (1122) GaN substrate.…”

Section: Designing Of Nitride Leds With Reduced Polarization Effectsmentioning

confidence: 91%

“…For lower inclination angles ϑ , i.e. for semi-polar orientations, the overlapping depends on a distance of ϑ from its value (about 34 • ) corresponding to [20,21,23,26,27,29,31] the same polarizations in both the quantum well and the barrier (Fig. 6).…”

Section: Designing Of Nitride Leds With Reduced Polarization Effectsmentioning

confidence: 99%

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

2013

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Polarization effects are studied within nitride light-emitting diodes (LEDs) manufactured on standard polar and semipolar substrates. A new theoretical approach, somewhat different than standard ones, is proposed to this end. It is well known that when regular polar GaN substrates are used, strong piezoelectric and spontaneous polarizations create built-in electric fields leading to the quantumconfined Stark effects (QCSEs). These effects may be completely avoided in nonpolar crystallographic orientations, but then there are problems with manufacturing InGaN layers of relatively high Indium contents necessary for the green emission. Hence, a procedure leading to partly overcoming these polarization problems in semi-polar LEDs emitting green radiation is proposed. The (1122) crystallographic substrate orientation (inclination angle of 58 • to c plane) seems to be the most promising because it is characterized by low Miller-Bravais indices leading to highquality and high Indium content smooth growth planes. Besides, it makes possible an increased Indium incorporation efficiency and it is efficient in suppressing QCSE. The In 0.3 Ga 0.7 N/GaN QW LED grown on the semipolar (1122) substrate has been found as currently the optimal LED structure emitting green radiation.

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“…Recently, 2-and 3-inchdiameter GaN(1122)/m-sapphire templates with crystalline quality approaching to conventionally grown c-plane GaN/sapphire have become available. Surprisingly, optically pumped lasing at 500 nm wavelength has been demonstrated in InGaN/GaN heterostructures grown on such semi-polar GaN(1122)/sapphire templates [7]. It is worthwhile therefore to compare these semi-polar InGaN/GaN heterostructures with their c-plane counterparts in more detail.…”

Section: Introductionmentioning

confidence: 97%

Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates

Strittmatter

Teepe

Knollenberg

et al. 2010

Novel in-Plane Semiconductor Lasers IX

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Results for long-wavelength emitters are presented for semi-polar InGaN/AlGaN/GaN heterostructures grown on GaN(1122)/m-sapphire templates by metalorganic chemical vapor deposition. The semi-polar GaN layers were 10 to 25 μm thick and grown by HVPE on sapphire substrates. X-ray diffraction measurements indicated high crystallographic quality that approaches that of GaN(0001) layers on sapphire. A comparison based on optical pumping experiments, low-and high-density excitation photoluminescence experiments, and atomic force microscopy is drawn between InGaN/GaN quantum well laser heterostructures grown by metalorganic vapor phase epitaxy either on either polar GaN(0001)/c-sapphire or on semi-polar GaN(1122)/m-sapphire. C-plane InGaN/GaN/sapphire structures exhibited low threshold pump power densities < 500 kW/cm 2 for emission wavelengths up to 450 nm. For laser structures beyond 450 nm the threshold pump power density rapidly increased resulting in a maximum lasing wavelength of 460 nm. Semipolar InGaN/GaN(1122)/m-sapphire structures showed a factor of 2-4 higher threshold pump power densities at wavelengths below 440 nm which is partly due to lower crystalline perfection of the semi-polar GaN/sapphire templates. However, at longer wavelengths > 460 nm the threshold power density for lasing of semi-polar heterostructures is less than that for c-plane heterostructures which enabled rapid progress to demonstration of lasing at 500 nm wavelength on semi-polar heterostructures. The absence of V-type defects in semi-polar, long-wavelength InGaN/GaN structures which are usually present in long-wavelength c-plane InGaN/GaN structures is attributed to this phenomenon. Keywords: INTRODUCTIONInGaN/GaN-based light emitters such as LEDs and laser diodes (LD) cover the visible spectral range and therefore are applicable in numerous fields such as general lighting, automotive lighting, and projection displays. However, the efficiency of these devices needs to be further improved in order to realize the full energy-saving potential in such applications. In particular, LEDs and LDs emitting in the spectral range λ>480 nm suffer from lower internal quantum efficiencies compared to devices emitting in the 400-460 nm range.Among the many issues affecting device efficiency, the polarization fields along the polar c-axis of the wurtzite material and the low In incorporation efficiency into InGaN layers at high growth temperatures (T>800°C) are of particular importance. Polarization fields lead to electron-hole separation in quantum wells and thereby to a strong current-dependant emission wavelength shift, and the low In incorporation efficiency at higher growth temperatures affects material quality of InGaN quantum well layers [1,2]. Both issues have an increasingly negative impact on device performance as the emission wavelength increases in the visible spectral range. Therefore, much attention has been devoted to growth on non-polar and semi-polar GaN surfaces whereby polarization fields are reduced and In incorporation efficiency ...

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Optically‐pumped lasing of semi‐polar InGaN/GaN(1122) heterostructures

Cited by 6 publications

References 9 publications

Semi‐polar nitride surfaces and heterostructures

Semi‐polar nitride surfaces and heterostructures

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates

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