Optically pumped nuclear magnetic resonance of semiconductors

Hayes, Sophia E.; Mui, Stacy; Ramaswamy, Kannan

doi:10.1063/1.2823131

Cited by 48 publications

(35 citation statements)

References 48 publications

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“…At the lowest illumination intensity (4 mW cm − 2 ), the polarization is positive throughout the sample, and is nearly independent of helicity, consistent with the bulk experiments reported previously 12 . At the highest illumination intensity (102 mW cm − 2 ) the sign of the polarization throughout much of the sample may be controlled with light polarization, consistent with many previous bulk studies in this regime 8,16 . Here the intermediate regime is of interest.…”

Section: Stray-fi Eld Imaging Nmr Imaging Is a Well-established Tecsupporting

confidence: 87%

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Optically rewritable patterns of nuclear magnetization in gallium arsenide

King

Meriles

et al. 2012

Nat Commun

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The control of nuclear spin polarization is important to the design of materials and algorithms for spin-based quantum computing and spintronics. Towards that end, it would be convenient to control the sign and magnitude of nuclear polarization as a function of position within the host lattice. Here we show that, by exploiting different mechanisms for electron -nuclear interaction in the optical pumping process, we are able to control and image the sign of the nuclear polarization as a function of distance from an irradiated GaAs surface. This control is achieved using a crafted combination of light helicity, intensity and wavelength, and is further tuned via use of NMR pulse sequences. These results demonstrate all-optical creation of micron scale, rewritable patterns of positive and negative nuclear polarization in a bulk semiconductor without the need for ferromagnets, lithographic patterning techniques, or quantum-confi ned structures.

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Section: Stray-fi Eld Imaging Nmr Imaging Is a Well-established Tecsupporting

confidence: 87%

“…Optical excitation for the craft ed preparation of nuclear polarization I z in semiconductors has a history extending back several decades 8 . Previous work focussed on the selection rules for excitation of spin-polarized electrons in GaAs, and the subsequent exchange of these electrons with spins bound at recombination centres 9 .…”

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confidence: 99%

Optically rewritable patterns of nuclear magnetization in gallium arsenide

King

Meriles

et al. 2012

Nat Commun

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“…In addition to the high magnetic field, the experiment requires cryogenic temperatures to attenuate competing spin-lattice relaxation processes, and it relies upon strong microwave irradiation near the electron precession frequency to accomplish polarization transfer. In alternative incarnations of this experiment that have been less generally applied, the initial electron polarization is produced by an optical pumping cycle involving the spin-orbit coupling 16 in a suitable substrate; the subsequent nuclear polarization can be controlled by electrical current in certain semiconductors and at cryogenic temperatures [17][18][19] .…”

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confidence: 99%

Sensitive magnetic control of ensemble nuclear spin hyperpolarization in diamond

et al. 2013

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Dynamic nuclear polarization, which transfers the spin polarization of electrons to nuclei, is routinely applied to enhance the sensitivity of nuclear magnetic resonance. This method is particularly useful when spin hyperpolarization can be produced and controlled optically or electrically. Here we show complete polarization of nuclei located near optically polarized nitrogen-vacancy centres in diamond. Close to the ground-state level anti-crossing condition of the nitrogen-vacancy electron spins, 13 C nuclei in the first shell are polarized in a pattern that depends sensitively upon the magnetic field. Based on the anisotropy of the hyperfine coupling and of the optical polarization mechanism, we predict and observe a reversal of the nuclear spin polarization with only a few millitesla change in the magnetic field. This method of magnetic control of high nuclear polarization at room temperature can be applied in sensitivity enhanced nuclear magnetic resonance of bulk nuclei, nuclear-based spintronics, and quantum computation in diamond.

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“…Indeed, optical pumping of spin orientation in semiconductors is a wellknown technique that is already exploited to generate highly polarized nuclear spin ensembles in bulk crystals. 10,11 At the nanoscale, these same principles have been adapted to the nuclear bath within semiconductor quantum dots, where spin order has been investigated, e.g., as a route to mitigate nuclear-induced decoherence of the electron spin, 12,13 control a two-electron qubit, 14 tune the polarization of quantum-dotemitted photons, 15 or extract information on local strain. 16 Here we use light-assisted, high-field nuclear magnetic resonance (NMR) to probe the dynamics of nuclear spin relaxation and transport near crystal defects in semi-insulating (SI) GaAs.…”

Section: Introductionmentioning

confidence: 99%

Near-band-gap photoinduced nuclear spin dynamics in semi-insulating GaAs: Hyperfine- and quadrupolar-driven relaxation

King

Reimer

et al. 2013

Phys. Rev. B

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Understanding and manipulating spin polarization and transport in the vicinity of semiconductor-hosted defects is a problem of present technological and fundamental importance. Here, we use high-field magnetic resonance to monitor the relaxation dynamics of spin-3/2 nuclei in semi-insulating GaAs. Our experiments benefit from the conditions created in the limit of low illumination intensities, where intermittent occupation of the defect site by photoexcited electrons leads to electric field gradient fluctuations and concomitant spin relaxation of the neighboring quadrupolar nuclei. We find indication of a heterogeneous distribution of polarization, governed by different classes of defects activated by either weak or strong laser excitation. Upon application of a train of light pulses of variable repetition rate and on/off ratio, we uncover an intriguing regime of mesoscale nuclear spin diffusion restricted by long-range, nonuniform electric field gradients. Given the slow time scale governing nuclear spin evolution, such optically induced polarization patterns could be exploited as a contrast mechanism to expose dark lattice defects or localized charges with nanoscale resolution.

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Optically pumped nuclear magnetic resonance of semiconductors

Cited by 48 publications

References 48 publications

Optically rewritable patterns of nuclear magnetization in gallium arsenide

Optically rewritable patterns of nuclear magnetization in gallium arsenide

Sensitive magnetic control of ensemble nuclear spin hyperpolarization in diamond

Near-band-gap photoinduced nuclear spin dynamics in semi-insulating GaAs: Hyperfine- and quadrupolar-driven relaxation

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