2007
DOI: 10.1016/j.tsf.2007.02.009
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Optically transparent ZnO-based n–i–p ultraviolet photodetectors

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Cited by 28 publications
(16 citation statements)
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“…Under UV illumination the absorbed photons in the vicinity of the heterojunctions give rise to the generation of electron-hole pairs. The enhancement in the carrier densities results in the redistribution of space charge in the depletion region of the heterojunctions, leading to shrink the barrier width [36,37]. In this case, more charge carriers are allowed to tunnel across the narrowed depletion region of the heterojunctions, increasing the current exponentially as can be seen in Figure 6.…”
Section: Photo-response Characteristicsmentioning
confidence: 96%
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“…Under UV illumination the absorbed photons in the vicinity of the heterojunctions give rise to the generation of electron-hole pairs. The enhancement in the carrier densities results in the redistribution of space charge in the depletion region of the heterojunctions, leading to shrink the barrier width [36,37]. In this case, more charge carriers are allowed to tunnel across the narrowed depletion region of the heterojunctions, increasing the current exponentially as can be seen in Figure 6.…”
Section: Photo-response Characteristicsmentioning
confidence: 96%
“…In this case, more charge carriers are allowed to tunnel across the narrowed depletion region of the heterojunctions, increasing the current exponentially as can be seen in Figure 6. is enhanced [32,37]. The double effect of the recombination-tunneling and SCLC transport mechanisms results in high photocurrent gain for the fabricated p-n heterojunction ultraviolet photodiodes.…”
Section: Photo-response Characteristicsmentioning
confidence: 99%
“…Compared with other wide‐band gap semiconductors, ZnO is recognized as a competitive candidate for UV photodetectors because of its higher resistant to high‐energy particle irradiation, higher exciton binding energy, higher carriers saturation velocity, and simpler and lower cost fabrication process . ZnO‐based photodetectors with different device structures have been reported in the literature . However, because producing p‐ type ZnO material is not yet an easy process and so far it has been unreliable, the metal‐semiconductor‐metal photodiode (MSM‐PD) has emerged persuasively as an attractive alternative device structure …”
Section: Introductionmentioning
confidence: 99%
“…It has a large exciton binding energy of 60 meV which makes the exciton hard to be thermally ionized. Therefore, ZnO is a very promising material for optoelectronic devices, such as ultraviolet light-emitting diodes [1][2][3] , laser diodes [4] , photodetectors [5,6] , surface acoustic wave devices [7,8] .…”
Section: Introductionmentioning
confidence: 99%