Stochastic Resonance (SR) is a nonlinear system specific phenomenon, which was demonstrated to lead to system unexpected (counterintuitive) performance improvements under certain noise conditions. Memristor, on the other hand, is a enhancement manifests as an increase of RMAX/RMIN ratio, facilitated by noise presence, that provides higher discreteness of the ON/OFF states. Thus, in this paper, memristor SR effects are explored, assuming various memristor models, and SR-based memristance range enhancement, tolerant to device-to-device variability, is demonstrated. Our experiments reveal that SR can induce significant RMAX/RMIN ratio increase under up to 60% variability, getting as high as 3.4 for 29 dBm noise power.