Optimal Cu buffer layer thickness for growing epitaxial Co overlayers on Si(111)7 × 7

Abstract

Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy Appl. Phys. Lett. 101, 152104 (2012) High quality ultrathin Bi2Se3 films on CaF2 and CaF2/Si by molecular beam epitaxy with a radio frequency cracker cell Appl. Phys. Lett. 101, 153105 (2012) Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission Appl. Phys. Lett. 101, 142109 (2012) Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy J. Appl. Phys. 112, 073510 (2012) The adsorption-controlled growth of LuFe2O4 by molecular-beam epitaxy Using scanning tunneling microscopy, reflection high energy diffraction and magnetic optical Kerr effect measurements, growth mode and the magnetic properties of epitaxial Co films on Si(111) with epitaxial Cu(111) buffer layers of various thicknesses have been studied. The strained 3.5-monolayer-thick Cu/Si(111) film has been found to be an optimal buffer, in which case an almost ideal layer-by-layer like growth of Co is observed up to six Co monolayers, due to a negligible lattice mismatch. The coercivity of Co films grown in this layer-by-layer like fashion has been determined to be about 10 Oe, testifying to the high quality of the formed Co film and Co/Cu interface. Changeover of the Co film growth mode from layer-by-layer like to multilayer has been found to result in the transition of the film magnetic properties from isotropic to markedly uniaxially anisotropic.

Numerical calculations of magnetic properties of nanostructures

“…The method of samples and experimental data obtainment was published in [52,53]. The essence of the proposed method of computer image processing and subsequent Monte Carlo (MC) simulations is based on the fact that raster STM and AFM images have been constructed by filling a three-dimensional space fcc lattice.…”

High Performance Calculation of Magnetic Properties and Simulation of Nonequilibrium Phenomena in Nanofilms

“…The brightness of a pixel in the STM image is a function of the distance between the tip and the surface, so the image pixels were used to construct a magnet with a given number of atomic layers, the number of which was controlled by experimental methods. The used algorithm is describes in detail in [7].…”

“…We used the approach, in which the maximum number of processes for the execution of the program equals to one form two of the linear dimensions of the STM (AFM) image in pixels; 2. Since each spin of the cobalt samples, see [7], the highest possible number of nearest neighbors z = 12, then for the correct accounting for spin neighbors standing on a block boundary rows (Fig. 2, marked by a white cross spin) the additional boundary rows of the neighboring processes sent in each process, which ones are located in different processes (braces on the left in Fig.…”

“…In [9], authors have presented a method to calculate the critical concentration, which one required for a phase transition to ferromagnetism in the crystal lattices with different numbers of nearest neighbors. We have determined the critical concentration of magnetic atoms for the transition to the ferromagnetic state for the monolayer and submonolayer samples of experimental data for which are given in [7,8]. The critical concentration p c the transition to the ferromagnetic state at T = 0 were de-termined from the relation (2): Table 1 shows the critical concentration required for a phase transition to the ferromagnetic state, which implies that the sample of 1.5 ML at low temperatures should be in a state of the cluster ferromagnetism as p < p c .…”

Calculation of magnetic properties of nanostructured films by means of the parallel Monte-Carlo

“…Экспериментальный метод получения образцов и магнитометрические данные были опубликованы в работах [Ivanov et al, 2011;Ivanov et al, 2012]. Метод компьютерной обработки В. Ю. Капитан, К. В. Нефедев СТМ-изображения и последующего МК-моделирования состоит в том, что на основе растровых изображений строится модельная решетка спинов.…”