Optimal Dark Current Reduction in Quantum Well 9 Âµm GaAs/AlGaAs Infrared Photodetectors with Improved Detectivity

Nejad, Shahram Mohammad; Olyaee, Saeed; Pourmahyabadi, Maryam

doi:10.3844/ajassp.2008.1071.1078

Cited by 8 publications

(2 citation statements)

References 13 publications

(18 reference statements)

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“…Fig. 12 includes some conventional materials for LWIR [13,[65][66][67][68] as well as a novel approaches using the wide bandgap II-VI ZnCdSe alloy system [20]. Fig.…”

Section: The (Alxga1-x)2o3/ga2o3 Design Spacementioning

confidence: 99%

Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

Lyman

Krishnamoorthy

2020

Journal of Applied Physics

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We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3) quantum well system. Conventional material systems have matured into successful intersubband device applications such as large area quantum well infrared photodetector (QWIP) focal plane arrays for reproducible imaging systems but are fundamentally limited via maximum conduction band offsets to mid-and long-wavelength infrared applications. Short-and near-infrared devices are technologically important to optical communications systems and biomedical imaging applications, but are difficult to realize in intersubband designs for this reason. In this work, we use a first-principles approach to estimate the expansive design space of monoclinic β-(AlxGa1x)2O3/Ga2O3 material system, which reaches from short-wavelength infrared (1-3 µm) to far infrared (>30 µm) transition wavelengths. We estimate the performance metrics of two QWIPs operating in the long-and short-wavelength regimes, including an estimation of high roomtemperature detectivity (~ 10 11 Jones) at the optical communication wavelength λp = 1.55 µm.Our findings demonstrate the potential of the rapidly maturing (AlxGa1-x)2O3/Ga2O3 material system to open the door for intersubband device applications.

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“…Fig. 12 includes some conventional materials for LWIR [13,[65][66][67][68] as well as a novel approaches using the wide bandgap II-VI ZnCdSe alloy system [20]. Fig.…”

Section: The (Alxga1-x)2o3/ga2o3 Design Spacementioning

confidence: 99%

Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

Lyman

Krishnamoorthy

2020

Journal of Applied Physics

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“…However, GeSn PDs suffer from a large dark current that restricts their practical applications [ 19 ]. Thermally generated carriers are one of the sources of this dark current, and external cooling is currently the best solution to overcome this problem [ 20 ]. However, this approach makes PD-based IR cameras bulky, heavy, and expensive.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Analysis of GeSn Quantum Dots for Photodetection Applications

Lin,

Ghosh,

Chang

2024

Sensors

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GeSn alloys have recently emerged as complementary metal–oxide–semiconductor (CMOS)-compatible materials for optoelectronic applications. Although various photonic devices based on GeSn thin films have been developed, low-dimensional GeSn quantum structures with improved efficiencies hold great promise for optoelectronic applications. This study theoretically analyses Ge-capped GeSn pyramid quantum dots (QDs) on Ge substrates to explore their potential for such applications. Theoretical models are presented to calculate the effects of the Sn content and the sizes of the GeSn QDs on the strain distributions caused by lattice mismatch, the band structures, transition energies, wavefunctions of confined electrons and holes, and transition probabilities. The bandgap energies of the GeSn QDs decrease with the increasing Sn content, leading to higher band offsets and improved carrier confinement, in addition to electron–hole wavefunction overlap. The GeSn QDs on the Ge substrate provide crucial type–I alignment, but with a limited band offset, thereby decreasing carrier confinement. However, the GeSn QDs on the Ge substrate show a direct bandgap at higher Sn compositions and exhibit a ground-state transition energy of ~0.8 eV, rendering this system suitable for applications in the telecommunication window (1550 nm). These results provide important insights into the practical feasibility of GeSn QD systems for optoelectronic applications.

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Optimization of different structural parameters of GeSn/SiGeSn Quantum Well Infrared Photodetectors (QWIPs) for low dark current and high responsivity

et al. 2021

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Optimal Dark Current Reduction in Quantum Well 9 Âµm GaAs/AlGaAs Infrared Photodetectors with Improved Detectivity

Cited by 8 publications

References 13 publications

Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

Theoretical Analysis of GeSn Quantum Dots for Photodetection Applications

Optimization of different structural parameters of GeSn/SiGeSn Quantum Well Infrared Photodetectors (QWIPs) for low dark current and high responsivity

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