Optimal design of an antireflection coating structure for enhancing the energy-conversion efficiency of a silicon nanostructure solar cell

Fan, Q.; Wang, Zhiqiang; Cui, Yanjun

doi:10.1039/c8ra03730b

Cited by 14 publications

(4 citation statements)

References 45 publications

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“…[27,[33][34][35] The induced optical modes at the sidewall and within the NWs enable to confine the electric field in the Si NW arrays strongly. [36][37][38] Thus, the strong electric field is confined in the NW array region. Figure 3b shows the simulated absorption spectra (A) for NW array structures by using the equation of A = 1 − R ref − T, where R ref and T are the reflectance and the transmittance, respectively.…”

Section: Resultsmentioning

confidence: 99%

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiO_x Surface Passivation

Son

Shin

Zhao

et al. 2023

Adv Materials Technologies

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Silicon (Si) nanowire (NW) array is a promising light‐trapping platform due to the strong interaction between light and nanostructure. A photodetector benefits from the improved optical absorption in the Si NW array. Although the optical absorption increases with the NW length, the large NW length is not always preferable owing to the large surface area. Here, the systematic study on the Si NW array photodetectors with varied NW lengths is investigated. It is revealed that the photodetectors with 1 µm length provide a highest responsivity of 0.65 A W−1 and a specific detectivity of 1.40 × 109 cm Hz1/2 W−1 at the wavelength of 1000 nm, including the dark current of 54 µA at 1 V. In addition, the silicon oxide (SiOx) surface passivation is introduced to induce the high photogain. As a result, the responsivity is improved by 13 times (0.55 A W−1) at 1100 nm. This work proposes high‐efficiency Si NW array photodetectors by the NW array length control and the SiOx surface passivation.

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Section: Resultsmentioning

confidence: 99%

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiO_x Surface Passivation

Son

Shin

Zhao

et al. 2023

Adv Materials Technologies

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“…Anti-reflection thin film plays a vital role in anti-glare displays [1], automobile dashboards [2], solar cells [3][4][5][6] and most optical systems [7][8][9][10][11]. By precisely controlling the refractive index and thickness of each film layer, depositing a coating having four or more layers on a substrate can generally reduce surface reflection to nearly zero over a wide range of wavelengths.…”

Section: Introductionmentioning

confidence: 99%

Broadband Anti-Reflection Coatings Fabricated by Precise Time-Controlled and Oblique-Angle Deposition Methods

Guo

Quan

et al. 2021

Coatings

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Broadband anti-reflection (AR) coatings are essential elements for improving the photocurrent generation of photovoltaic modules and enhancing visibility in optical devices. In this paper, we report a hybrid-structured, anti-reflection coating that combines multi-layer thin films with a single top-oblique deposited layer. By simply introducing this low-refractive index layer, the broadband anti-reflection properties of optical thin films can be improved while simplifying the preparation. Precise time-controlled and oblique-angle deposition (OAD) methods were used to fabricate the broadband AR coating. By accurately measuring and adjusting the design errors for the thin and thick film layers, 22-layer and 36-layer AR coatings on a sapphire substrate with a 400–2000 nm wideband were obtained. This bottom-up preparation process and AR coating design have the potential to significantly enhance the broadband antireflective properties for many optical systems and reduce the manufacturing cost of broadband AR coatings.

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“…In this paper, we introduce an inexpensive method to synthesize a moth-eye SiO 2 ARC by using reacting ion-beam etching (RIE) with a single-layer polystyrene (PS) nanosphere as a mask. We can optimize the antireflective properties of the moth-eye structure through carefully adjusting the self-assembly PS mask, which can be easily achieved by changing the size of the PS nanosphere [33,34]. Unlike the reported paper [35,36], the antireflection band we were concerned with was the much broader 400-2000 nm, which means a higher manufacturing difficulty.…”

Section: Introductionmentioning

confidence: 99%

Hybrid Nanostructured Antireflection Coating by Self-Assembled Nanosphere Lithography

Song

et al. 2019

Coatings

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Broadband antireflection (AR) coatings are essential elements for improving the photocurrent generation of photovoltaic modules or the enhancement of visibility in optical devices. In this paper, we report a hybrid nanostructured antireflection coating combination that is a clean and efficient method for fabricating a nanostructured antireflection coating (ARC). A multilayer thin-film was introduced between the ARC and substrate to solve the significant problem of preparing nanostructured ARCs on different substrates. In this way, we rebuilt a gradient refractive index structure and optimize the antireflective property by simply adjusting the moth-eye structure and multilayers. Subwavelength-structured cone arrays were directly patterned using a self-assembled single-layer polystyrene (PS) nanosphere array as an etching mask. Nanostructure coatings exhibited excellent broadband and wide-angle antireflective properties. The bottom-up preparation process and hybrid structural combination have the potential to significantly enhance the broadband and wide-angle antireflective properties for a number of optical systems that require high transparency, which is promising for reducing the manufacturing cost of nanostructured AR coatings.

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Optimal design of an antireflection coating structure for enhancing the energy-conversion efficiency of a silicon nanostructure solar cell

Abstract: We introduced ICP method for two kinds of Si-cell arrays: silicon nanocones and nanopillars. Silicon nanowire arrays were prepared by the Ag-assisted chemical etching method. We experimentally demonstrated the J–V characterization of three structures.

Cited by 14 publications

References 45 publications

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiO_x Surface Passivation

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiO_x Surface Passivation

Broadband Anti-Reflection Coatings Fabricated by Precise Time-Controlled and Oblique-Angle Deposition Methods

Hybrid Nanostructured Antireflection Coating by Self-Assembled Nanosphere Lithography

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Optimal design of an antireflection coating structure for enhancing the energy-conversion efficiency of a silicon nanostructure solar cell

Abstract: We introduced ICP method for two kinds of Si-cell arrays: silicon nanocones and nanopillars. Silicon nanowire arrays were prepared by the Ag-assisted chemical etching method. We experimentally demonstrated the J–V characterization of three structures.

Cited by 14 publications

References 45 publications

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiOx Surface Passivation

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiOx Surface Passivation

Broadband Anti-Reflection Coatings Fabricated by Precise Time-Controlled and Oblique-Angle Deposition Methods

Hybrid Nanostructured Antireflection Coating by Self-Assembled Nanosphere Lithography

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High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiO_x Surface Passivation

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiO_x Surface Passivation