Optimal Design of High-Speed Electro-Absorption Modulated Laser Based on Double Stack Active Layer Structure

Sun, Yongjiao; Jia, Hanxiang; Xiong, Yonghua; Li, Dengao

doi:10.1109/ogc52961.2021.9654379

Cited by 1 publication

(2 citation statements)

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“…This is because of SAG-DSAL's transparent design of the upper and lower active layer energy band structure, which greatly reduces the probability of the photons generated in the active region being absorbed by the lower active region, and reduces the internal loss . In addition, the transparent design of the band structure makes the injection current rapidly concentrate into the upper active region, and improves the differential gain coefficient of the active region.The expression for the threshold current th J of the laser is shown in Formula (10) .…”

Section: Pi Characteristic Simulation and Analysismentioning

confidence: 99%

“…In order to solve the above problems, a new type of the selective-area growth and double-stack Active layer (SAG-DSAL-EML) with iron buried waveguide structure is designed, replacing the P-InP layer in the traditional PNPN burial with the semi-insulating iron-doped InP layer can reduce the far-field divergence angle of the laser, and the iron-doped InP layer reduces the junction capacitance of the modulator, so makes EML higher modulation bandwidth [9][10] . Based on the above ideas, a new type of SAG-DSAL-EML with 1.31 um InGaAsP/InP buried structure is designed by Advanced Laser Diode Simulator (ALDS), including the active region structure design of SAG-DSAL-EML and the structure design of buried waveguide with 1.31 um InGaAsP/InP.…”

Section: Introductionmentioning

confidence: 99%

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Design and cavity surface optimization of a new electro-absorption modulation laser

yang

Jia

Yu³

2023

14th International Photonics and Optoelectronics Meetings (POEM 2022)

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In order to solve the problems of slow response of the Selective Area Growth -Double Stack Active Laser -Electroabsorption Modulated Laser(SAG-DSAL-EML)in high frequency modulation and catastrophic optical damage (COD) caused by the sharp rise of cavity surface temperature when working at high temperature, a new type of SAG-DSAL-EML is designed, In this paper, the InGaAsP/InP material with 1.31 um iron-doped buried structure is used. The active region of the new SAG-DSAL-EML becomes mesa structure, and the iron-doped InP layer is grown on its two layers of epitaxy, and the cavity surface is coated with Al2O3 ,in the meantime the heat insulation structure is added. Firstly, ALDS and HFSS are used to analyze the laser and modulator of the designed iron-doped buried structure EML, the threshold current of SAG-DSAL laser is reduced by 13% , the lateral limiting ability of iron-doped buried structure is increased by 52% , the difference of far-field transverse and longitudinal angles is reduced by 40% , and the far-field divergence angle is smaller than the traditional ridge waveguide structure Compared with the traditional PNPN burying structure, the response band width of the iron-doped burying structure modulator is improved by about 24% at -3 dB, which meets the basic requirements of high-speed laser communication. Then, the solid heat transfer of the laser model is analyzed numerically and simulated by COMSOL.At 550K,the temperature of the cavity surface is simulated when there is no heat-insulating structure, no heat-insulating structure, no heat-insulating structure and no heat-insulating structure. The experimental results show that the laser with coating and heat insulation can effectively prevent COD at 550K and prolong its service life.

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Section: Pi Characteristic Simulation and Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%