Optimal Design of Planar Transformer for GaN based Phase-Shifted Full Bridge Converter

Pereira, Thiago; Hoffmann, Felix; Prasobhu, Pramod Kumar; Liserre, Marco; Golev, Victor; Schnack, Jasper; Schumann, U.

doi:10.1109/apec39645.2020.9124579

Cited by 12 publications

(5 citation statements)

References 20 publications

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“…After substituting ( 9) into (7) and simplifying ( 7) by ignoring a 'large' L M , the transfer function can be approximated as (10).…”

Section: B Blocking Capacitor (C B ) Designmentioning

confidence: 99%

“…Based on (10), the high pass filter can be represented as (11). Thus, to achieve enough attenuation for the DC component, C b should be as small as possible.…”

Section: B Blocking Capacitor (C B ) Designmentioning

confidence: 99%

“…Using fast Gallium Nitride (GaN) devices, the PSFB converter can operate at higher frequencies, which increases power density and response speed [9], [10]. However, a higher switching frequency also makes the PSFB converter's inherent drawback, load-dependent ZVS, more…”

Section: Introductionmentioning

confidence: 99%

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Improved Circuit Design and Adaptive Burst Mode Control in PSFB Converters for Higher Efficiency Over a Wide Power Range

2022

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This paper presents an improved circuit design of Gallium Nitride (GaN) based phase shifted full bridge (PSFB) converters along with a new adaptive burst mode control strategy, to achieve high efficiency over a wide power range, including light loads. The main challenges of PSFB converters addressed in this paper are: load-dependent zero-voltage switching (ZVS), transformer saturation, and secondary side ringing. Since switching losses of GaN FETs are dominant at light loads, adaptive burst mode control can be employed to improve the efficiency at lower output power. By periodically switching output current between 0 A and minimum ZVS current, adaptive burst mode control can enable both smaller effective switching frequency and lower switching losses. A correction factor 'k' is adopted in the adaptive burst mode control's current loop PI calculation so that the output current can switch fast without any overshoot that increases switches' current stress. To verify the effectiveness of the proposed circuit and controller design, a 375 V input, 70 V output, 800 W PSIM simulation model as well as experimental prototype are developed and tested. The experimental results demonstrate the practical benefits of the proposed adaptive burst mode control.INDEX TERMS Phase shifted full bridge (PSFB), zero-voltage switching (ZVS), burst mode control, Gallium Nitride (GaN) FETs, wide range efficiency improvement.

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“…After substituting ( 9) into (7) and simplifying ( 7) by ignoring a 'large' L M , the transfer function can be approximated as (10).…”

Section: B Blocking Capacitor (C B ) Designmentioning

confidence: 99%

“…Based on (10), the high pass filter can be represented as (11). Thus, to achieve enough attenuation for the DC component, C b should be as small as possible.…”

Section: B Blocking Capacitor (C B ) Designmentioning

confidence: 99%

See 1 more Smart Citation

Improved Circuit Design and Adaptive Burst Mode Control in PSFB Converters for Higher Efficiency Over a Wide Power Range

2022

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“…A 500-W, 200-kHz phase-shifted full bridge converter is designed with the optimal planar transformer for EV charging applications. 95 The leakage inductance is minimized without being compromised for the parasitic capacitances.…”

Section: Ac-dc Convertersmentioning

confidence: 99%

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Yadlapalli

Anuradha²,

Kandipati³

et al. 2021

Int J Energy Res

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The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role in various applications such as adapters, uninterrupted power supplies, smart grids, and electric vehicles (EVs). They have the phenomenal properties such as high critical breakdown field, WBG, and high-saturated drift velocity as compared to the silicon (Si). This article throws a light on the classification and recent advancements of the GaN-based power devices along with their structural features. Moreover, it explores the critical issues that degrade the device performance and also various methods to improve their performance. The recently developed commercial GaN devices are enumerated with their figure of merits (FOMs) comparison with the Si and SiC devices. The outrageous features of GaN devices are well utilized for realizing the high power density and high efficiency power converters in case of EV applications. The updated survey of various GaN devices-based ac-dc, dc-dc, and dc-ac converters is presented along with their salient features. This article also emphasizes the approaches for resolving the power module issues such as parasitics, layout, and thermal design other than the power converters. This review is ultimately helpful for the design engineers to abridge the technical gaps arising due to the power electronics barriers.

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“…In 2010, authors of [13] an optimal design study was proposed with an improved interleaving structure that minimizes AC resistance, leakage inductance and stray capacitance. And more recently, references [14], [15] in 2014, has studied the trade-off between power losses and frequency at high levels, results are compared using the Dowell method. On the other hand, in [16], a PT with a novel topology (Meander-type) is designed, fabricated and later improved on [17].…”

Section: Introductionmentioning

confidence: 99%

Construction and Simulation of a Planar Transformer Prototype

Guarín

Velarde

Castaño

et al. 2021

TESEA

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This paper illustrates the design and building of a planar transformer prototype with a 1:1 transformation ratio for high-frequency applications in power electronics. By using reference literature and considering the ferrite core dimensions, the windings were conceived and exported to Gerber format using PCB design software. The transformer prototype was then assembled and tested under laboratory conditions for frequencies from 800 Hz to 5 MHz, which showed a sinusoidal wave at the transformer output from 1.3 kHz onwards and a better performance starting at 10 kHz, where the loses were significantly reduced and the transformation ratio was closer to the originally designed. As a final step, a finite element method (FEM) análisis was carried out to understand the electromagnetic flux behavior using a 3D Multiphysics simulation software. The 3d building process and details are explained step by step and the resulting magnetic flux density is graphically shown for the core and the windings.

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Optimal Design of Planar Transformer for GaN based Phase-Shifted Full Bridge Converter

Cited by 12 publications

References 20 publications

Improved Circuit Design and Adaptive Burst Mode Control in PSFB Converters for Higher Efficiency Over a Wide Power Range

Improved Circuit Design and Adaptive Burst Mode Control in PSFB Converters for Higher Efficiency Over a Wide Power Range

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Construction and Simulation of a Planar Transformer Prototype

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