Proceedings of the 2012 ACM/IEEE International Symposium on Low Power Electronics and Design 2012
DOI: 10.1145/2333660.2333714
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Optimal power switch design for dynamic voltage scaling from high performance to subthreshold operation

Abstract: This work explores optimizing power switch design for dynamic voltage scaling schemes that use headers to connect components to voltage supplies ranging from strong inversion to subthreshold values. We propose using NMOS devices with their gate controlled at the nominal voltage as power switches connected to the subthreshold voltage rail. Measured results show that an NMOS can provide the subthreshold voltage with a power switch size >280X smaller than a PMOS. For architectures targeting operation from subthre… Show more

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Cited by 6 publications
(10 citation statements)
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“…The body of these PMOS switches is tied to the virtualto avoid forward body bias, which results in a significant increase in the leakage current through these switches when the 1 st and/or the 2 nd switches are activated [7]. The gate drive signals of the 3 rd and 4 th PMOS switches are either connected to the ground when they are activated or to if they are inactivated.…”
Section: Structure Support For Fine-grained Ultra Dynamic Voltage Scamentioning
confidence: 99%
See 2 more Smart Citations
“…The body of these PMOS switches is tied to the virtualto avoid forward body bias, which results in a significant increase in the leakage current through these switches when the 1 st and/or the 2 nd switches are activated [7]. The gate drive signals of the 3 rd and 4 th PMOS switches are either connected to the ground when they are activated or to if they are inactivated.…”
Section: Structure Support For Fine-grained Ultra Dynamic Voltage Scamentioning
confidence: 99%
“…We may replace some PMOS switches by NMOS switches and reduce area overhead while maintaining the same performance and power consumption, as illustrated in [7]. The 1 st and 2 nd PMOS switches cannot be replaced by NMOS ones.…”
Section: Type Of Header Power Switchesmentioning
confidence: 99%
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“…In addition, though subV T circuits do now draw large amount of currents to cause significant IR drop directly from the supply, our architecture ( Figure 2.3) compels that PDVS headers will be used to incorporate power-gating and DVS capabilities. With PDVS header design, it can be expected to have a worst case -10% degradation in the virtual rail supply voltage [27]. Thus, a characterization at -10% supply voltage degradation should be done.…”
Section: Modifications During Cell Characterizationmentioning
confidence: 99%
“…Limited energy is available with the intelligent sensor nodes. Suppression of energy consumption is therefore the primary concern in the design of intelligent sensor nodes [131] - [141], [279] - [285]. Alternatively, performance is typically not a critical issue in these self-sustaining applications.…”
Section: Power/ground Gating In Ultra Low Power / Ultra Low Voltage Imentioning
confidence: 99%