Optimal seed planting for growth-regulated nanomanufacturing

Abbasi, Shaghayegh; Kitayaporn, Sathana; Schwartz, Daniel T.; Böhringer, K. F.

doi:10.1109/memsys.2010.5442468

Cited by 3 publications

(4 citation statements)

References 5 publications

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“…For hemispherical seeds with neighbors, diffusive interactions can be modeled with Green's functions, as depicted in equation ( 3), to produce the partial current at a hemispherical seed i that depends on interactions with j other seeds [6,15].…”

Section: Generalized Ose Growth Modelmentioning

confidence: 99%

Electrodeposition modeling and optimization to improve thin film patterning with orchestrated structure evolution

et al. 2012

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Orchestrated structure evolution is an alternative nanomanufacturing approach that combines the advantages of top-down patterning and bottom-up self-organizing growth. It relies upon tool-directed patterning to create 'seed' locations on a surface from which a subsequent deposition process produces the final, merged film. Despite its demonstrated ability to reduce patterning time by orders of magnitude, our prior reliance on mass transfer limited deposition and square seed arrays resulted in extraneous film growth along pattern edges, thereby limiting the pattern quality of the final film. Here, quality improvements are demonstrated by modeling and tuning the growth mechanism of the deposition step to include charge transfer effects. In addition, a seed positioning optimization technique derived from simulated annealing is introduced as a method for relocating the seeds to minimize film overgrowth at the pattern edges. These improvements enable OSE to maintain geometric quality while substantially reducing the time and cost compared to traditional direct-write manufacturing methods.

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Section: Generalized Ose Growth Modelmentioning

confidence: 99%

Electrodeposition modeling and optimization to improve thin film patterning with orchestrated structure evolution

et al. 2012

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“…where d i j,n is the normalized distance between the i th seed and its j th neighbor, and the sigma term is the summation of all neighbors [38,39]. The seed distance is normalized here as an approximation to accommodate the finite size of the growing seeds (rigorously the solution is for point sinks).…”

Section: Multiple Seed Growthmentioning

confidence: 99%

“…This equation shows how the growth of any seed i is influenced by all other seeds j = i in the pattern [39].…”

Section: Multiple Seed Growthmentioning

confidence: 99%

Orchestrated structure evolution: modeling growth-regulated nanomanufacturing

Abbasi¹,

Kitayaporn²,

Schwartz³

et al. 2011

Nanotechnology

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Orchestrated structure evolution (OSE) is a scalable manufacturing method that combines the advantages of top-down (tool-directed) and bottom-up (self-propagating) approaches. The method consists of a seed patterning step that defines where material nucleates, followed by a growth step that merges seeded islands into the final patterned thin film. We develop a model to predict the completed pattern based on a computationally efficient approximate Green's function solution of the diffusion equation plus a Voronoi diagram based approach that defines the final grain boundary structure. Experimental results rely on electron beam lithography to pattern the seeds, followed by the mass transfer limited growth of copper via electrodeposition. The seed growth model is compared with experimental results to quantify nearest neighbor seed-to-seed interactions as well as how seeds interact with the pattern boundary to impact the local growth rate. Seed-to-seed and seed-to-pattern interactions are shown to result in overgrowth of seeds on edges and corners of the shape, where seeds have fewer neighbors. We explore how local changes to the seed location can be used to improve the patterning quality without increasing the manufacturing cost. OSE is shown to enable a unique set of trade-offs between the cost, time, and quality of thin film patterning.

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“…We have been exploring the development of proteins engineered to modify nucleation and growth of Zn-based semiconductors as part of our effort to create the molecules, algorithms, and growth processes for integrating self-propagating growth (bottom-up) with tool-directed patterning (top-down), [1][2] . Controlled ZnO and ZnS growth and patterning is motivated by the wide range of electronic, energy and health applications where these materials are used.…”

mentioning

confidence: 99%