Optimal width of barrier region in X/γ-ray Schottky diode detectors based on CdTe and CdZnTe

Kosyachenko, L. A.; Aoki, Toru; Lambropoulos, C.; Gnatyuk, V. A.; Melnychuk, S. V.; Sklyarchuk, V.; Grushko, E. V.; Maslyanchuk, O. L.; Sklyarchuk, O. F.

doi:10.1063/1.4790358

Cited by 30 publications

(20 citation statements)

References 17 publications

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“…At the same decreasing N d -N a , the detection efficiency of 57 Co (hν = 122 kеV) isotope varies within one order of magnitude and the detection efficiency of 133 Ba (356 kеV) and 137 Cs (662 kеV) isotopes vary relatively weak. An important feature of the results is that the dependences η (N d -N a ) for all the isotopes are described by a curve with maximum (Figure 6c) [6,10,11,25]. As seen, in all cases, the detection efficiency rather rapidly increases as the SCR widens starting at high uncompensated impurity concentrations (10 15 cm −3 ).…”

Section: Detection Efficiency Of Cdte Based X/γ-ray Detectormentioning

confidence: 66%

“…The detection efficiency spectra of CdTe-based crystals with Schottky diode taking into account the drift and diffusion components can be expressed as [25]. Figure 6b shows the detection efficiency spectra of CdTe (Cd 0,9 Zn 0,1 Te) crystals with Schottky diode at the voltage V = 400 V applied to the detector and different concentrations of uncompensated donors N d -N a in the material.…”

Section: Detection Efficiency Of Cdte Based X/γ-ray Detectormentioning

confidence: 99%

See 1 more Smart Citation

Mechanisms of Charge Transport and Photoelectric Conversion in CdTe-Based X- and Gamma-Ray Detectors

Maslyanchuk¹,

Melnychuk²,

Gnatyuk³

et al. 2018

New Trends in Nuclear Science

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This chapter deals with (i) the charge transport mechanisms in X-and gamma-ray detectors both Ohmic and Schottky types based on CdTe and its alloys with an almost intrinsic conductivity (the peculiarities of the formation of self-compensated complexes due to the doping of Cd(Zn)Te crystals with elements of III or V groups (In, Cl) are taken into account); (ii) the reasons of insufficient energy resolution in the X-and gamma-ray spectra taken with the detectors under study; (iii) the quantitative model which describes the spectral distribution of the detection efficiency of Cd(Zn)Te crystals with Schottky diodes; (iv) a correlation between the concentration of uncompensated impurities in the Cd(Zn)Te crystals and collection efficiency of photogenerated charge carriers in the detectors with a Schottky contact; (v) the possibility of applications of CdTe thin films with a Schottky contact as an alternative to the existing X-rays image detectors based on a-Se.

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Section: Detection Efficiency Of Cdte Based X/γ-ray Detectormentioning

confidence: 66%

Section: Detection Efficiency Of Cdte Based X/γ-ray Detectormentioning

confidence: 99%

Mechanisms of Charge Transport and Photoelectric Conversion in CdTe-Based X- and Gamma-Ray Detectors

Maslyanchuk¹,

Melnychuk²,

Gnatyuk³

et al. 2018

New Trends in Nuclear Science

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“…[2][3][4][5]. At the nanosecond laser irradiation, the measured NEC lifetime amounts to 3 × 10 −8 s[5].…”

mentioning

confidence: 94%

“…Cadmium telluride is a base material for the creation of detectors of x-rays and gamma radiation, as well as infrared sensors. Special attention to CdTe is associated, in particular, with large atomic numbers of its constituting elements and a considerable transverse cross-section for the photo-electric absorption [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Dependence of the CdTe Melting Threshold on the Pulse Duration and Wavelength of Laser Radiation and the Parameters of Non-Equilibrium Charge Carriers

Veleschuk¹,

Vlasenko²,

Vlasenko³

et al. 2017

Ukr. J. Phys.

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The dependences of the melting threshold of CdTe under the pulsed laser irradiation on the radiation wavelength and the laser pulse duration p are calculated with regard for the nonequilibrium character of charge carriers. Three components of the energy released at the thermalization of excited carriers under the nanosecond laser irradiation of CdTe in the fundamental absorption region are considered: the component that dominates immediately after the excitation, and the components released at the nonradiative bulk and nonradiative surface recombinations. Together, they determine the depth of heat penetration into the crystal and, therefore, its melting threshold. It is shown that the CdTe melting threshold grows from 2.6 to 4.75 MW/cm 2 , when changes from 300 to 800 nm at p = 20 ns. The changes in the nonequilibrium charge carrier parameters (the surface recombination rate, lifetime, and diffusion depth) are found to vary the CdTe melting threshold by at least 30%. K e y w o r d s: cadmium telluride, pulsed laser irradiation.

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“…During the last two decades, we have widely used semi-insulating CdTe semiconductors, produced by Acrorad for material characterization [15][16][17] and elaboration of both Schottky diode-type [18][19][20][21][22][23][24][25][26][27] and M-p-n structured [27][28][29][30][31][32][33][34] X/γ-ray detectors. Using different metals (Ni, Cr, In, Al, and Au) for electrodes to form appropriate Schottky and ohmic electrical contacts or employing laser-induced doping of a thin CdTe layer with In, we have obtained high performance diode-type X/γ-ray detectors with excellent roomtemperature energy resolution.…”

Section: Introductionmentioning

confidence: 99%

CdTe X/γ-ray Detectors with Different Contact Materials

Gnatyuk

Maslyanchuk

Solovan

et al. 2021

Sensors

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Different contact materials and optimization of techniques of their depositions expand the possibilities to obtain high performance room temperature CdTe-based X/γ-ray detectors. The heterostructures with ohmic (MoOx) and Schottky (MoOx, TiOx, TiN, and In) contacts, created by DC reactive magnetron sputtering and vacuum thermal evaporation, as well as In/CdTe/Au diodes with a p-n junction, formed by laser-induced doping, have been developed and investigated. Depending on the surface pre-treatment of semi-insulating p-CdTe crystals, the deposition of a MoOx film formed either ohmic or Schottky contacts. Based on the calculations and I‑V characteristics of the Mo-MoOx/р-CdTe/MoOx-Mo, In/р-CdTe/MoOx-Mo, Ti-TiOx/р-CdTe/MoOx-Mo, and Ti-TiN/р-CdTe/MoOx-Mo Schottky-diode detectors, the current transport processes were described in the models of the carrier generation–recombination within the space-charge region (SCR) at low bias, and space-charge limited current incorporating the Poole–Frenkel effect at higher voltages, respectively. The energies of generation–recombination centers, density of trapping centers, and effective carrier lifetimes were determined. Nanosecond laser irradiation of the In electrode, pre-deposited on the p-CdTe crystals, resulted in extending the voltage range, corresponding to the carrier generation–recombination in the SCR in the I‑V characteristics of the In/CdTe/Au diodes. Such In/CdTe/Au p-n junction diode detectors demonstrated high energy resolutions (7%@59.5 keV, 4%@122 keV, and 1.6%@662 keV).

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Optimal width of barrier region in X/γ-ray Schottky diode detectors based on CdTe and CdZnTe

Cited by 30 publications

References 17 publications

Mechanisms of Charge Transport and Photoelectric Conversion in CdTe-Based X- and Gamma-Ray Detectors

Mechanisms of Charge Transport and Photoelectric Conversion in CdTe-Based X- and Gamma-Ray Detectors

Dependence of the CdTe Melting Threshold on the Pulse Duration and Wavelength of Laser Radiation and the Parameters of Non-Equilibrium Charge Carriers

CdTe X/γ-ray Detectors with Different Contact Materials

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