2006
DOI: 10.4028/www.scientific.net/msf.527-529.1325
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Optimisation of 4H-SiC MOSFET Structures for Logic Applications

Abstract: Although Silicon Carbide has become the material of choice for high power applications in a range of extreme environments, the interest in creating active chemical sensors requires the development of transistors for additional control circuits to operate in these environments. Despite the recent advances in the quality of oxide layers on SiC, the mobility of inversion layers is still low and this will affect the maximum frequency of the operation for these devices. We present simulation results which indicate … Show more

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