2000
DOI: 10.1016/s0022-0248(00)00478-4
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Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)

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Cited by 102 publications
(64 citation statements)
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“…Hydrogen desorption, if overdone, also leads to etching of the Si surface. 3,13,14 Thus, as will also be shown in this paper, sub-optimal desorption results in incomplete oxide removal and excessive desorption results in surface damage. This necessitates the use of an optimum time-temperature thermal desorption step, with or without ex-situ oxide removal.…”
mentioning
confidence: 53%
See 1 more Smart Citation
“…Hydrogen desorption, if overdone, also leads to etching of the Si surface. 3,13,14 Thus, as will also be shown in this paper, sub-optimal desorption results in incomplete oxide removal and excessive desorption results in surface damage. This necessitates the use of an optimum time-temperature thermal desorption step, with or without ex-situ oxide removal.…”
mentioning
confidence: 53%
“…2 It was recognized early on that the quality of GaN layers grown on these AlN buffers are dependent upon the buffer layer deposition parameters, primarily growth temperature (900-1200C) and thickness (10-500 nm). [2][3][4][5][6][7][8] However, the presence of an oxide free and smooth Si surface favouring epitaxy also plays a major role in determining the quality of AlN buffers deposited and hence on the subsequent AlGaN-GaN epilayers. Ex-situ treatment, using HF/buffered HF, is used either as a stand-alone pre-treatment 6,9,10 or in conjunction with an in-situ thermal desorption step in a hydrogen ambient 2,3,11,12 for native oxide removal from Si.…”
mentioning
confidence: 99%
“…Depending on the AlN growth temperature, growth mode of GaN can be either two dimensional or three dimensional (2D or 3D) and structural, electronic and optical properties are consequently changed. 8 While, the growth of N-rich nucleation layer (Al/N <1) resulted in significant reduction in buffer leakage with a power added efficiency of 62%. 9 It has been reported that the sheet resistance of GaN as high as 10 11 Ω/Sq.…”
Section: Introductionmentioning
confidence: 99%
“…During the last years light emitting diodes, UV detectors and high-electron-mobility and field-effect transistors have been fabricated from GaN on Si proving real possibilities [2 -8]. III-N thin films have been grown on Si by metalorganic chemical vapour deposition (MOCVD) [9][10][11] as well as molecular beam epitaxy (MBE) [12][13][14]. The substrate chosen is Si(111) which exhibits the same 3m symmetry like GaN(0001).…”
Section: Introductionmentioning
confidence: 99%
“…The amorphous layer may result in a polycrystalline and defected epilayer [15,16], and recent efforts have achieved its elimination mainly by employing Al pre-deposition and a low-temperature AlN buffer layer, resulting in interface of good structural quality [15 -21]. However transmission electron microscopy (TEM) observations on such epilayers have shown that they contain large densities of defects, mainly threading dislocations and inversion domain boundaries (IDBs), as well as stacking faults, pinholes, voids, hillocks, and grain boundaries [10,11,16,17,22,23]. IDBs in particular have been shown to emanate from substrate surface steps as well as from the AlN/GaN interface [22,23].…”
Section: Introductionmentioning
confidence: 99%