Optimisation of amorphous and polymorphous thin silicon layers for the formation of the front-side of heterojunction solar cells on p-type crystalline silicon substrates

Defect states on the surfaces of a P-type c-Si wafer and how they control the performance of a double heterojunction solar cell

“…3a, inset). Since V oc depends mainly on the recombination at the N-a-Si:H/P-c-Si interface [12,13], where there is now a higher field, the fall in V oc is less severe in this case, than for that of high N ss on FS of the c-Si wafer.…”

“…In these structures, the defect states-particularly on the front surface (FS) of the c-Si wafer (i.e., the face receiving the incident light)-are known to play a crucial role in limiting the cell performance [12,13]. In this article we use computer modeling in conjunction with experiments to study the effect of the defect states on the front and rear faces of the c-Si (P-type) wafer in double HJ (DHJ) structures where both the emitter N-a-Si:H and the BSF layers are deposited using the radio-frequency plasmaenhanced chemical vapor deposition (RF-PECVD) technique.…”

Design optimization of bifacial HIT solar cells on p-type silicon substrates by simulation

“…Although SANYO's original design used an n-type substrate as the absorber for the HIT solar cell, current researches concentrate on developing the HIT solar cell on a p-type substrate, because of its popularity in the photovoltaic industry [5][6][7]. However, inferior performance was observed for devices fabricated on c-Si(p) as compared with those on c-Si(n).…”

High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctions

“…We here focus on the interface between n-type a-Si:H and p-type c-Si. We measured the coplanar conductance of devices having various a-Si:H layer thickness, without or with an additional interfacial layer deposited under conditions that normally lead to undoped polymorphous silicon (pm-Si:H) on glass [3,4]. With the help of a numerical model, we show that these simple conductance measurements can give strong indications on the band diagram at the heterointerface.…”