Abstract-The texturization of monocrystalline silicon wafers using a mixture of potassium phosphate tribasic (K 3 PO 4 ) and potassium phosphate dibasic (K 2 HPO 4 ) solutions has been investigated. A series of comparative experiments were made to indicate the dependence of hemispherical surface reflectance on the solution temperature, the etching time, and the concentration of K 3 PO 4 and K 2 HPO 4 . The hemispherical surface reflectance and the surface morphology were measured with a UVVisible Spectrophotometer and a scanning electronic microscope (SEM), respectively. A wafer with uniform pyramid structures and an average weighted reflectance of 11.27% was obtained after texturing with the mixed solution of 15wt% potassium phosphate tribasic (K 3 PO 4 ) and 1wt% potassium phosphate dibasic (K 2 HPO 4 ) at 85℃ for 15min. our results show that the texturing method based on K 3 PO 4 /K 2 HPO 4 solutions is cost effective, has low pollution and good reproducibility, This method is promising for a large-scale production of crystalline silicon solar cells.