Optimised surface-electrode ion-trap junctions for experiments with cold molecular ions

Mokhberi, Arezoo; Schmied, Roman; Willitsch, Stefan

doi:10.1088/1367-2630/aa6918

Cited by 15 publications

(27 citation statements)

References 42 publications

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“…The surfaceelectrode paradigm has the advantages of substantial optical access to the ions, more straightforward design and simulation [84][85][86][87], and straightforward 2D microfabrication, while also allowing for integration of additional control components beneath the electrodes, making it very amenable to combination with, e.g., CMOS-based technologies [88]. The drawbacks include lower trap frequencies and potential depths for the same applied voltage, but these effects are not severe, and the benefits of this platform have enabled significant progress in trap functionality and integration [59,80,[89][90][91][92][93][94][95], much of which is described in more detail in later sections of this review.…”

Section: Miniature Microfabricated and Surface-electrode Trapsmentioning

confidence: 99%

Trapped-ion quantum computing: Progress and challenges

Bruzewicz

Chiaverini

McConnell

et al. 2019

Applied Physics Reviews

1,107

644

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Trapped ions are among the most promising systems for practical quantum computing (QC). The basic requirements for universal QC have all been demonstrated with ions and quantum algorithms using few-ion-qubit systems have been implemented. We review the state of the field, covering the basics of how trapped ions are used for QC and their strengths and limitations as qubits. In addition, we discuss what is being done, and what may be required, to increase the scale of trapped ion quantum computers while mitigating decoherence and control errors. Finally, we explore the outlook for trapped-ion QC. In particular, we discuss near-term applications, considerations impacting the design of future systems of trapped ions, and experiments and demonstrations that may further inform these considerations. CONTENTS

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Section: Miniature Microfabricated and Surface-electrode Trapsmentioning

confidence: 99%

Trapped-ion quantum computing: Progress and challenges

Bruzewicz

Chiaverini

McConnell

et al. 2019

Applied Physics Reviews

1,107

644

View full text Add to dashboard Cite

show abstract

“…that is included in the computation of E r (r) and E θ (r), where m should be set as 0 or 1 depending on the case. This integral can be evaluated by applying (14), which results in Since β N = 2π and β 0 = 0, we operate the first term at the right hand side of the previous expression such that…”

Section: Circular Region With An Arbitrary Staircase-like Function V (φ)mentioning

confidence: 99%

Electrostatic field of angular-dependent surface electrodes

2020

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We present an analytic strategy to find the electric field generated by surface electrode SE with angular dependent potential. This system is a planar region A kept at a fixed but non-uniform electric potential V (φ) with an arbitrary angular dependence. We show that the generated electric field is due to the contribution of two fields: one that depends on the circulation on the contour of the planar region -in a Biot-Savart-Like (BSL) term-, and another one that accounts for the angular variations of the potential in A. This approach can be used to find exact solutions of the BSL electric field for circular or polygonal contours of the planar region with periodic distributions of the electric potential. Analytic results are validated with numerical computations and the Finite Element Method.

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“…This system plays an important role in the study of Surface-electrode (SE) Radio Frequency ion traps which can be modelled as an infinite plane gaplessly covered by an array of SE. Those SE ion traps are a promising candidates to build ion-trap networks suitable for large-scale quantum processing [1][2][3][4][5][6][7][8]. There are several works describe analytic treatments including the SE in diverse situations : rectangular strip electrode held at constant [9], Ring-shaped SE traps [10,11], and the gapless SE with angular dependent potential [12].…”

Section: Introductionmentioning

confidence: 99%

Electric vector potential formulation in electrostatics: analytical treatment of the gaped surface electrode

2020

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Electric vector potential Θ(r) is a legitimate but rarely used tool to calculate the steady electric field in free-charge regions. Commonly, it is preferred to employ the scalar electric potential Φ(r) rather than Θ(r) in most of the electrostatic problems. However, the electric vector potential formulation can be a viable representation to study certain systems. One of them is the surface electrode SE, a planar finite region A− kept at a fixed electric potential with the rest grounded including a gap of thickness ν between electrodes. In this document we use the Helmholtz Decomposition Theorem and the electric vector potential formulation to provide integral expressions for the surface charge density and the electric field of the SE of arbitrary contour ∂A. We also present an alternative derivation of the result found in [M. Oliveira and J. A. Miranda 2001 Eur. J. Phys. 22 31] for the gapless (ν = 0) surface electrode GSE without invoking any analogy between the GSE and magnetostatics. It is shown that electric vector potential and the electric field of the gapped circular SE at any point can be obtained from an average of the gapless solution on the gap.

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Optimised surface-electrode ion-trap junctions for experiments with cold molecular ions

Cited by 15 publications

References 42 publications

Trapped-ion quantum computing: Progress and challenges

Trapped-ion quantum computing: Progress and challenges

Electrostatic field of angular-dependent surface electrodes

Electric vector potential formulation in electrostatics: analytical treatment of the gaped surface electrode

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