Optimization and Characterization of RF Sputtered a-InSnZnO Thin-Film Transistors Fabricated at Low Temperature

Wan, Yunhao; Zhang, Meng; Zhang, Xincheng; Yang, Yuyang; Zeng, Yuhuang; Chen, Siting; Yan, Yan; Liou, Juin J.

doi:10.1109/isne48910.2021.9493620

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2023

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“…7. One of the key factors impacting the occurrence of material defects is the annealing procedure conditions [13]. As annealing proceeds, it is believed the oxygen vacancy content in the film may be gradually improved.…”

Section: Resultsmentioning

confidence: 99%

P‐1.9: Optimization of InSnZnO Thin‐Film Transistors Based on Ultra‐Low‐Temperature Annealing Process

Wan

Chen

Huang

et al. 2023

Symp Digest of Tech Papers

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The application of metal oxide thin‐film transistors (TFTs) in the field of flexible displays is particularly constrained by the critical fabrication process temperature. In this work, InSnZnO (ITZO) TFTs are optimized based on an ultra‐low‐temperature annealing process. When the annealing temperature and time are respectively set to 100 ° C and 560 h, ITZO TFTs exhibit decent device electrical characteristics with field‐effect mobility of ~14.59 cm2V‒1s‒1, subthreshold swing of ~0.39 mV/dec, and on/off current ratio of ~7.12 × 108. The test results provide the experimental basis of ITZO TFTs for further flexible applications.

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Section: Resultsmentioning

confidence: 99%