2023
DOI: 10.12928/telkomnika.v21i1.23462
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Optimization of 14 nm double gate Bi-GFET for lower leakage current

Abstract: In recent years, breakthroughs in electronics technology have upgraded the physical properties of the metal oxide semiconductor field effect transistor (MOSFET) toward smaller sizes and improvements in both quality and performance. Hence, the growth field effect transistor (GFET) is being promoted as one of the worthy candidates due to its superior material characteristics. A 14 nm horizontal double-gate bilayer graphene field effect transistor (FET) utilizing high-k and a metal gate, which are composed of haf… Show more

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