switches. It leads to the asymmetric distribution of up-state capacitances and down-state resistances throughout the signal line with identical actuation voltage. The proposed switch demonstrates excellent microwave performances over a compact area. Switch is also compared with the present state-of-the-art of the SPDT switches and reported in Ref. 8.
CONCLUSIONWe have proposed and implemented the functionalities of DC contact MEMS SPST switch behavior with different levels of characterizations. A systematic extensive measurement process has been followed to ensure the optimum switch performance. The isolation performance of the DC contact MEMS switch is improved up to 30 dB with series shunt configurations compared to a single SPST switch. Finally, a SPDT switch has been developed with 40 dB of isolation up to 20 GHz frequency within a smallest possible area of 1.25 mm 2 . In future, the authors intend to do experimental justifications of the reported SPDT switch within a 0-level or thin film packaging.
ACKNOWLEDGMENTThe authors express their profound gratitude to National Program on Micro and Smart Systems for setting up MEMS design lab and RF characterization facilities at CARE, Indian Institute of Technology, Delhi, India. ABSTRACT: A method for bandpass filter modeling taking advantage of the space mapping (SM) is presented in this letter. The coarse model is constructed by the fraction polynomial approximating the data from high-fidelity simulations, and the approach of obtaining the coefficients is specifically designed to avoid rapidly increasing complexity as the data adds. The surrogate model, which the accuracy is further enhanced, is established utilizing SM. In this work, the SM process allows a flexible tradeoff between accuracy and computational cost. The proposed model can be operated with a relatively wide variation of design Figure 6 Measured change in