Optimization of active antireflection ZnO films for p-GaAs-based heterojunction solar cells

In this work, we have synthesized ZnO:Al thin films by pulsed laser deposition technique and investigated their microstructural and optical properties. The XRD study confirmed a polycrystalline structure of wurtzite ZnO in all films. Further, Al doping has improved the crystallinity and decreased the crystal size and volume of the unit cell. The surface morphology was homogeneous with nanoscopic crystals clustered to form granular nanoparticles. The optical properties significantly improved by increasing the Al doping concentration. The produced thin films are excellent candidates for use as an anti-reflection layer in solar cells due to their outstanding properties.

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Optimization of active antireflection ZnO films for p-GaAs-based heterojunction solar cells

Cited by 3 publications

References 24 publications

Effective surface passivation of GaAs nanowire photodetectors by a thin ZnO capping

Effective surface passivation of GaAs nanowire photodetectors by a thin ZnO capping

Defects in GaInAsBi Epitaxial Films on Si(001) Substrates

SYNTHESIS AND CHARACTERIZATION OF Al-DOPED ZnO THIN FILMS AS ANTI-REFLECTION COATINGS FOR SOLAR CELL APPLICATIONS

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