Optimization of Al-doped ZnO films by RF magnetron sputtering at room temperature for Cu (In, Ga) Se<sub>2</sub> solar cells

Zhang, Xianyang; Zhu, Rongyang

doi:10.1088/1742-6596/1549/4/042006

Cited by 7 publications

(4 citation statements)

References 30 publications

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“…In comparison to typical AZO films oriented along the 𝑐-axis of the (002) plane, RT-AZO films oriented along the 𝑎-axis are anticipated to exhibit a superior second harmonic conversion coefficient [22][23][24][25]. We achieved a transmittance of 95 % and a resistivity of ~4×10 −3 Ω•cm for RT-AZO without additional heat or laser treatment [26][27][28][29][30][31][32]. Our findings suggest that this deposition method has the potential for producing high-performance AZO films for optoelectronic applications.…”

Section: Introductionmentioning

confidence: 94%

Influence of Sputtering Pressure on the Conductivity and Transparency of Aluminum-Doped Zinc Oxide Films

Park,

Heo,

Lee

et al. 2023

Appl. Sci. Converg. Technol.

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Aluminum-doped zinc oxide (AZO) films are promising candidates for transparent electronics due to their low resistivity, high transmittance, and long-term stability. In this study, we investigated the impact of sputtering pressure on resistivity saturation in AZO films that are deposited by using radio frequency magnetron sputtering on transparent glass at room-temperature (RT). An X-ray diffraction analysis reveals that RTdeposited AZO (RT-AZO) films prepared at a pressure of 20 Pa exhibit a predominant orientation along the 𝑎-axis, favoring the (100) direction, as well as the lowest resistivity value of ∼ 4 × 10 −3 Ω⋅cm and the highest transmittance (95 %) in the visible range. These findings highlight the potential of our deposition approach for producing highly oriented (100) RT-AZO films, paving the way for their application to low-cost transparent electronics.

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Section: Introductionmentioning

confidence: 94%

Influence of Sputtering Pressure on the Conductivity and Transparency of Aluminum-Doped Zinc Oxide Films

Park,

Heo,

Lee

et al. 2023

Appl. Sci. Converg. Technol.

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“…Due to these properties ZnO is a promising material used for fabrication of microelectronic and optoelectronic devices comparable with indium tin oxide. [1][2][3][4][5][6][7] ZnO thin films are processed using methods such as chemical vapor deposition, 8 spray pyrolysis, 9 thermal evaporation, 10 r.f. magnetron sputtering, 11,12 and sol-gel method.…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical properties of Al-doped ZnO thin films deposited by sol-gel method

NICOLESCU,

ANASTASESCU,

CALDERON MORENO

et al. 2024

Rev.Roum.Chim.

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The multilayer (10 layers) Al doped ZnO (AZO) thin films were deposited on glass substrate by sol-gel & dipping method. X-Ray diffraction measurements showed that the AZO films were polycrystalline with a hexagonal wurtzite structure. The morphological properties of the films were analyzed by atomic force microscopy showing continuous and homogeneous film, completely covering the substrates. The thickness, optical constants, optical band gap (Eg) and transmittance (T) of AZO films were assessed by spectroscopic ellipsometry on UV-vis-NIR spectral range. The AZO film has high transmittance above 80% in the visible region and the optical band-gap energy around 3.7 eV. The electrical characteristics regarding conductivity, mobility and carrier concentrations, were measured by Hall Effect measurements (van der Pauw method). The bulk carrier concentration of the AZO film with 10 layers was found to be 1.16x1019 cm-3. The vibrational bands were obtained by Raman analysis. Defects due to oxygen vacancies in the prepared AZO films were evidenced by photoluminescence spectroscopy (PL). The optical and electrical properties of the AZO thin films proved the possibility to be used in optoelectronic applications.

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“…They are usually used for a low-e window, in organic light-emitting diodes, solar cells, etc. [8][9][10][11]. Several TCOs, such as indium tin oxide (ITO) and zinc oxide (ZnO), have been intensively studied.…”

Section: Introductionmentioning

confidence: 99%

Influence of Processing Time in Hydrogen Plasma to Prepare Gallium and Aluminum Codoped Zinc Oxide Films for Low-Emissivity Glass

Chang

Chan

et al. 2022

Coatings

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Low-emissivity glass has high transmission in the visible region and high reflectivity in the infrared region. Gallium and aluminum codoped zinc oxide (GAZO) processed by hydrogen (H2) plasma treatment holds promise for fabricating good low-emissivity glass. The applied processing time is one of the key factors in plasma treatment. The GAZO films were prepared by in-line sputtering at room temperature, and the effect of using different plasma processing times on the structural, electrical and optical properties of the films were surveyed. Experimental results indicate that H2 plasma treatment of GAZO film samples indeed influenced the structure, optical and electrical properties. An appropriate processing time can improve the electrical properties and reduce the emissivity of GAZO films. The optimum processing time is 5 min for plasma treatment of GAZO films. The electrical resistivity and emissivity of plasma-annealed films for 5 min decrease by 59% and 55% compared to those of as-deposited GAZO films. Values of 5.3 × 10−4 Ω-cm in electrical resistivity, 0.13 in emissivity and 94% in average optical transmittance in the visible wavelength region could be obtained for GAZO films after H2 treatment of 5 min in this work for low-emissivity glass applications.

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Optimization of Al-doped ZnO films by RF magnetron sputtering at room temperature for Cu (In, Ga) Se₂ solar cells

Cited by 7 publications

References 30 publications

Influence of Sputtering Pressure on the Conductivity and Transparency of Aluminum-Doped Zinc Oxide Films

Influence of Sputtering Pressure on the Conductivity and Transparency of Aluminum-Doped Zinc Oxide Films

Optical and electrical properties of Al-doped ZnO thin films deposited by sol-gel method

Influence of Processing Time in Hydrogen Plasma to Prepare Gallium and Aluminum Codoped Zinc Oxide Films for Low-Emissivity Glass

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Optimization of Al-doped ZnO films by RF magnetron sputtering at room temperature for Cu (In, Ga) Se2 solar cells

Cited by 7 publications

References 30 publications

Influence of Sputtering Pressure on the Conductivity and Transparency of Aluminum-Doped Zinc Oxide Films

Influence of Sputtering Pressure on the Conductivity and Transparency of Aluminum-Doped Zinc Oxide Films

Optical and electrical properties of Al-doped ZnO thin films deposited by sol-gel method

Influence of Processing Time in Hydrogen Plasma to Prepare Gallium and Aluminum Codoped Zinc Oxide Films for Low-Emissivity Glass

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Optimization of Al-doped ZnO films by RF magnetron sputtering at room temperature for Cu (In, Ga) Se₂ solar cells