Optimization of Al-Doped ZnO Transparent Conducting Oxide and Emitter Layers for Enhanced Performance of Si Heterojunction Solar Cells

Selmane, Naceur; Cheknane, Ali; Hilal, Hikmat S.

doi:10.1007/s11664-019-07917-w

Cited by 12 publications

(3 citation statements)

References 24 publications

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“…From the band structure, it is evident that the quantum well is created when there is a band discontinuity in the heterojunction [52]. The GaN barriers have a band gap value of 3.42 eV [47] and the wells have adjustable value depending on the In mole fraction x.…”

Section: The 6-qwled Structurementioning

confidence: 99%

Optimizing performance and energy consumption in GaN(n)/In x Ga 1- x N/GaN/AlGaN/GaN(p) light emitting diodes by quantum-well number and mole fraction

Selmane

Cheknane

Khemloul

et al. 2023

Preprint

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Light-emitting devices (LEDs) with higher performance, lower energy demand and minimal environmental impact are needed. With wide-band gaps and high emission efficiencies, III-V nitride semiconductors are useful for LEDs in short-wavelength regions. A multiple quantum well (MQW LED), based on InGaN/GaN, is proposed. The structure involves GaN(n)/InxGa1−xN(i)/GaN(i)/AlGaN(p)/GaN(p), where GaN(n) and GaN(p) have different dopants to formulate the junction at which electric field occurs, InxGa1−xN(i) is a 3 nm-thick intrinsic quantum well with (x) as indium mole fraction, GaN(i) is barrier intrinsic layer and AlGaN(p) is a 15 nm-thick electron blocking layer (EBL). Simulation is performed by Tcad-Silvaco. Various characteristics such as current versus voltage (I-V) plots, luminosity power, band diagram, spectrum response, radiative recombination rate and electric field effect, have been investigated. By controlling the InxGa1−xN(i) number of quantum wells and their indium mole fraction (0.18 or lower), all MQW LED characteristics including radiative recombination rate, needed current, spectral power and emitted light wavelength, are optimized. Increasing (x) value improves radiative recombination rate, spectral power and band gap with lower needed current. Devices with 6 quantum wells and x = 0.16 or 0.18 exhibit best performance. For power saving and environmental purposes, optimal mole ratio is x = 0.16.

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Section: The 6-qwled Structurementioning

confidence: 99%

Optimizing performance and energy consumption in GaN(n)/In x Ga 1- x N/GaN/AlGaN/GaN(p) light emitting diodes by quantum-well number and mole fraction

Selmane

Cheknane

Khemloul

et al. 2023

Preprint

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“…Titanium oxide (TiO x ), 20,38 niobium oxide (NbO x ) 39 and tantalum oxide (TaO x ) 40 have been used in passivating electron contacts, while molybdenum oxide (MoO x ), 23 tungsten oxide (WO x ), 41 vanadium oxide (VO x ) 42 and chromium oxide (CrO x ) 43 have been used in passivating hole contacts in silicon solar cells to replace the highly doped a‐Si layers in HJT structures. ITO, doped indium oxide [In 2 O 3 :X (X are dopants such as H, 44 Sn 45 and Zn 46 )], and doped zinc oxide (ZnO: Al, 47,48 B 49 and Ga 50 ) have been considered as TCOs for solar cell structures.…”

Section: Solar Cell Architectures Employing Tmosmentioning

confidence: 99%

Techno‐economic analysis of the use of atomic layer deposited transition metal oxides in silicon heterojunction solar cells

Chang

Poduval

Sang

et al. 2022

Progress in Photovoltaics

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The industry for producing silicon solar cells and modules has grown remarkably over the past decades, with more than a 100-fold reduction in price over the past 45 years. The main solar cell fabrication technology has shifted over that time and is currently dominated by the passivated emitter and rear cell (PERC). Other technologies are expected to increase in market share, including tunnel-oxide passivated contact (TOPCon) and heterojunction technology (HJT). In this paper, we examine the cost potential for using atomic layer deposition (ALD) to form transition metal oxide (TMO) layers (MoO x , TiO x and aluminium-doped zinc oxide [AZO]) to use as lower cost alternatives of the p-doped, n-doped and indium tin oxide (ITO) layers, respectively, the layers normally used in HJT solar cells. Using a bottom-up cost and uncertainty model with equipment cost data and process experience in the lab, we find that the production cost of these variations will likely be lower per wafer than standard HJT, with the main cost drivers being the cost of the ALD precursors at highvolume production. We then considered what efficiency is required for these sequences to be cost effective in $/W and discuss whether these targets are technically feasible. This work motivates further work in developing these ALD TMO processes to increase their efficiency towards their theoretical limits to take advantage of the processing cost advantage.

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“…Further, numerous research on thin lm based silicon heterojunction solar cell is ongoing using metal oxides as n-type layer with crystalline silicon (p-cSi) wafer as p-type as well as metal oxides as p-type layer with n-type cSi (n-cSi) wafer due to their easy availability and environment friendly [5][6][7][8][9]. Aluminium doped zinc oxide (AZO) and zinc oxide can be used as window layers, antire ection coating (ARC) layer & as TCO layer in solar cells [10,11]. They also nd applications in other devices like transducers, ultrasonic oscillators and gas sensors.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation for Optimization of Ultra-thin n-type AZO and TiO2 Based Textured p-type c-Si Heterojunction Solar Cells

Yadav

Kumar

2021

Silicon

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A maximum e ciency of 17% for ultra-thin n-type AZO layer and 17.5% for ultra-thin n-type TiO 2 layer based silicon heterojunction solar cell is reported by optimizing its properties which is much higher than practically obtained e ciency signifying a lot of improvements can be performed to improve e ciency of TiO 2 /Si and AZO/Si heterojunction solar cell. AZO layer and TiO 2 layer is used as n-type emitter layer and crystalline silicon wafer is used as p-type (p-cSi) layer for modelling AZO/Si and TiO 2 /Si heterojunctions solar cell respectively using AFORS HET automat simulation software. Various parameters like thickness of AZO, TiO 2 layer, p-cSi layer, doping concentration of donors (Nd) and effective conduction band density (Nc) are optimized. Finally, texturing at different angle is studied and maximum e ciency is reported at 70 µm thick p-type crystalline Silicon (p-cSi) wafer, that can be very helpful for manufacturing low cost HJ solar cells at industrial scale because of thin wafer and removal of additional processing setup required for deposition of amorphous silicon i-layer. Utilization of TiO 2 and Aluminium doped Zinc Oxide as n-type layer and p-cSi as p-type layer can help in producing low cost and e cient heterojunction (HJ) than compared to HJ with intrinsic thin layer HIT solar cells.

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Optimization of Al-Doped ZnO Transparent Conducting Oxide and Emitter Layers for Enhanced Performance of Si Heterojunction Solar Cells

Cited by 12 publications

References 24 publications

Optimizing performance and energy consumption in GaN(n)/In x Ga 1- x N/GaN/AlGaN/GaN(p) light emitting diodes by quantum-well number and mole fraction

Optimizing performance and energy consumption in GaN(n)/In x Ga 1- x N/GaN/AlGaN/GaN(p) light emitting diodes by quantum-well number and mole fraction

Techno‐economic analysis of the use of atomic layer deposited transition metal oxides in silicon heterojunction solar cells

Numerical Simulation for Optimization of Ultra-thin n-type AZO and TiO2 Based Textured p-type c-Si Heterojunction Solar Cells

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