“…13,22 Antisolvents which improve film formation often exhibit low polarity and dielectric constants, high boiling points, good miscibility with the precursor solvent, and cannot dissolve any perovskite or related precursor phase. 8,23,24 The most commonly used antisolvents are toluene 13 , chlorobenzene 22 , and diethyl ether, 24 but many others have been tested as well. 21,22,[24][25][26] The aim of the antisolvent is to accelerate the crystallization process, induce homogeneous nucleation with high nucleation density, thus promote uniform grain growth leading to significantly improved morphology, surface coverage, and formation of larger grains.…”