Optimization of band gap, thickness and carrier concentrations for the development of efficient microcrystalline silicon solar cells: A theoretical approach

Sharma, Mansi; Kumar, Sushil; Dwivedi, Neeraj; Juneja, Sandeep; Gupta, Anurag; Sudhakar, S.; Patel, Kamlesh

doi:10.1016/j.solener.2013.08.012

Cited by 30 publications

(10 citation statements)

References 19 publications

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“…Moreover, the electrical properties of ITO films are tunable with respect to layer thickness as same as the optical properties. Since the resistivity ( ) is directly proportional to sheet resistance (R s ) and total thickness (t) of the sample, i.e., = R s ×t, 19 the sheet resistances of the prepared samples were calculated and the measured values were tabulated along with other optical and electrical parameters as given in Table I. For better understanding, the sheet resistances of both ITO and AZO samples were plotted, as shown in Figure 5.…”

Section: Resultsmentioning

confidence: 99%

Transparent Electrode for Si Heterojunction Photoelectric Devices

Kumar¹,

Kim²,

Kim³

2016

j nanosci nanotechnol

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The transparent conductive oxide layers are of great interest in recent researches because of their tunable properties which avail them to be used in varieties of applications. The important and most widely used TCO materials such as ITO and AZO films were prepared with three different layer thicknesses using DC sputtering system. The structural, optical and electrical characteristics of both ITO and AZO samples were analyzed and compared to reveal thickness dependent tunable properties of TCO materials. The maximum transmittance of 99.5% was obtained for AZO films at 600-700 nm wavelength range. The resistivity of ITO films was 200 times lesser than that of AZO films. The internal and external quantum efficiencies of ITO devices increased with increasing layer thickness whereas this situation was just opposite in case of AZO devices. The optical and electrical properties of ITO samples were found easily adjustable by changing layer thickness as compared to AZO samples. This study explores the strong association between the layer thickness and the properties of TCO films. This would be useful to extend the applications boundary of TCO materials.

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Section: Resultsmentioning

confidence: 99%

Transparent Electrode for Si Heterojunction Photoelectric Devices

Kumar¹,

Kim²,

Kim³

2016

j nanosci nanotechnol

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“…The maximum value of V oc (764.8 mV) was obtained at 3 nm of p-layer and it was decreased as increase in the thickness of p-layer. The reason is that increased defect density in the player with increase in the thickness of p-layer [27,33]. The V oc decreased from 764.8 mV to 760.2 mV as increase of p-layer thickness of 3-20 nm respectively.…”

Section: Optimization Of Thickness Of A-si:h(p) Layermentioning

confidence: 99%

“…Dwivedi et.al obtained simulation e ciency of 27% by modeling different thickness of layers of various structures [31]. However, most of the researchers used the bandgap of p-layer 1.7 eV in the simulation [13,[32][33][34][35]. This band gap is almost 0.1-0.2 eV lower for boron doped a-Si:H lms, which are deposited by experimental methods.…”

Section: Introductionmentioning

confidence: 99%

Influence of Defect States and Thickness of Interface Layer On High Efficiency of c-Si/a-Si:H Heterojunction Solar Cells With Higher Bandgap a-Si:H(p) Layer By Simulation

Kanneboina

2021

Preprint

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This paper presents the influence of defect states and thickness of interface layer on high efficiency of c-Si/a-Si:H heterojunction solar cells with higher bandgap emitter a-Si:H(p) layer by AFORSHET simulation tool. At first, the performance of Ag/ZnO/a-Si:H(p)/ a-Si:H(i)/ c-Si(n)/ a-Si:H(i)/ a-Si:H(n)/Ag heterojunction solar cells was studied by altering the thickness of a-Si:H(p) and a-Si:H(i) layers. The best values of open circuit voltage (Voc) (764.8 mV), short circuit current density (Jsc) (43.15 mA/cm2), fill factor (FF) (85.71) and efficiency(ɳ) (28.28%) were obtained at 3 nm of a-Si:H(p) and a-Si:H(i) layer. In the same structure, c-Si(n) interface was introduced in between c-Si(n) and a-Si:H(i) layer. It is found that the solar cell performance was not changed by varying defect density from 109-1014 cm-3 for thin (5 and 10 nm) interface layer and estimated values are 761.7 mV, 38.83 mA/cm2, 86.09%, 25.46% correspond to Voc, Jsc, FF, ɳ respectively. For very thick interface layer, defect density has shown huge impact on the device performance. At 1 µm, the Voc, FF and ɳ values have been changed from 760.2 to 653.2 mV, 85.9 to 80.76% and 22.94 to 18.47% for the defect density of 109 to 1014 cm-3 respectively.

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“…Recently some of the simulation studies related to aSi:H pin, lc-Si:H pin and HIT bifacial solar cells have also been carried out by our group (Singh et al, 2012;Sharma et al, 2013;Dwivedi et al, 2013). In the present study we have optimized thickness and band gap of microcrystalline emitter layer, amorphous front and back intrinsic layers and p-type crystalline base wafer thickness for different types of HJ and HIT solar cells.…”

Section: Simulationmentioning

confidence: 99%