Optimization of Cu(In, Ga)Se2 (CIGSe) thin film solar cells parameters through numerical simulation and experimental study

Valencia, Daniel; Conde, J.; Ashok, A.; Avendaño, C. A. Meza; Vilchis, H.; Velumani, S.

doi:10.1016/j.solener.2021.05.075

Cited by 18 publications

(1 citation statement)

References 69 publications

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“…With the increase in the thickness of the MoSe 2 layer from 33.67 nm to 72.25 nm, the resistance of the Mo contact produced at 140 W was higher than that produced at 80 W as shown in Figure 9 b, with mean values of 10 Ω and 13 Ω, respectively. In agreement with the observations in previous studies [ 12 , 50 , 51 , 52 , 53 , 54 ]. Overall, with the reduction in the grain size as the number of grain boundaries reduces, so did the dislocation density and micro-strain, resulting in higher carrier mobility and lower resistivity.…”

Section: Analysis and Discussionsupporting

confidence: 93%

Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface

et al. 2023

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The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe2 interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical resistivity, as well as its morphological, structural, and adhesion characteristics, were analyzed regarding the deposition power. In the case of thinner films of about 300 nm deposited at 80 W, smaller grains and a lower volume percentage of grain boundaries were found, compared to 510 nm thick film with larger agglomerates obtained at 140 W DC power. By increasing the deposition power, in contrast, the conductivity of the Mo film significantly improved with lowest sheet resistance of 0.353 Ω/square for the sample deposited at 140 W. Both structural and Raman spectroscopy outputs confirmed the pronounced formation of MoSe2, resulting from Mo films with predominant (110) orientated planes. Sputtered Mo films deposited at 140 W power improved Mo crystals and the growth of MoSe2 layers with a preferential (103) orientation upon the Se-free annealing. With a more porous Mo surface structure for the sample deposited at higher power, a larger contact area developed between the Mo films and the Se compound was found from the CIGSe film deposited on top of the Mo, favoring the formation of MoSe2. The CIGSe/Mo hetero-contact, including the MoSe2 layer with controlled thickness, is not Schottky-type, but a favourable ohmic-type, as evaluated by the dark I-V measurement at room temperature (RT). These findings support the significance of regulating the thickness of the unintentional MoSe2 layer growth, which is attainable by controlling the Mo deposition power. Furthermore, while the adhesion between the CIGSe absorber layer and the Mo remains intact, the resistance of final devices with the Ni/CIGSe/Mo structure was found to be directly linked to the MoSe2 thickness. Consequently, it addresses the importance of MoSe2 structural properties for improved CIGSe solar cell performance and stability.

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Section: Analysis and Discussionsupporting

confidence: 93%

Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface

et al. 2023

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Vapor–Solid Reaction Techniques for the Growth of Organic–Inorganic Hybrid Perovskite Thin Films

Hu,

Hou,

Duan

et al. 2024

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Perovskite solar cells are considered next‐generation photovoltaic technology due to their remarkable advancements in power conversion efficiency. To transition this technology from the lab to industry, the method for preparing perovskite thin films must support mass production. Currently, the solution‐based slot‐die technique is the primary method for depositing large‐area perovskite thin films. However, solution‐based methods are not standard in the semiconductor industry, where vapor‐based techniques are favored for their high controllability and reproducibility. The cost of vacuum facilities and the complexity of these processes hinder many researchers, resulting in vapor‐based technique development lagging behind solution‐based methods in device efficiency and scale. This review focuses on the progress in growing perovskite thin films using vapor–solid reaction techniques, which are believed to offer the most direct path to commercialization. By examining the crystallization and growth mechanisms of perovskite films and discussing specific optimization strategies for vapor–solid reactions, insights into future developments and challenges in fabricating perovskite solar cells using fully vacuum processes are concluded.

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Review on the developments in copper indium gallium diselenide (CIGSe)-based thin film photovoltaic devices

Adhikari,

Acosta-Najarro,

Fragoso-Medina

et al. 2024

J Mater Sci: Mater Electron

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Optimization of Cu(In, Ga)Se2 (CIGSe) thin film solar cells parameters through numerical simulation and experimental study

Cited by 18 publications

References 69 publications

Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface

Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface

Vapor–Solid Reaction Techniques for the Growth of Organic–Inorganic Hybrid Perovskite Thin Films

Review on the developments in copper indium gallium diselenide (CIGSe)-based thin film photovoltaic devices

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