Optimization of Electronic Domain‐Wall Properties by Aliovalent Cation Substitution

Schaab, Jakob; Cano, A.; Lilienblum, Martin; Yan, Z.; Bourret, Edith; Ramesh, R.; Fiebig, Manfred; Meier, Dennis

doi:10.1002/aelm.201500195

Cited by 37 publications

(67 citation statements)

References 23 publications

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“…Possible origins were discussed in the main text (see also Ref. 16). As mentioned there, then the sample can be described by a parallel RC circuit for the layers (with Rl and Cl for the layer resistance and capacitance, respectively), connected in series to the bulk sample [ Fig.…”

Section: Non-intrinsic Relaxor Behaviormentioning

confidence: 99%

“…These considerations are based on Refs. [16] and [26] of the main paper. As mentioned in the main text, Maxwell-Wagner (MW) relaxations can be caused by the existence of thin insulating layers within the sample or at its surface, termed internal barrier layer capacitors (IBLCs) or surface barrier layer capacitors (SBLCs), respectively.…”

Section: Non-intrinsic Relaxor Behaviormentioning

confidence: 99%

“…Resolving this into real and imaginary part and calculating the capacitance via C'tot = G"tot/ leads to [16]:…”

Section: Non-intrinsic Relaxor Behaviormentioning

confidence: 99%

“…In Ref. [16], for ErMnO3 it was explicitly demonstrated that the insulating DWs are depleted from mobile charge carriers (holes). From our results we conclude that the charge transport in these DWs is dominated by tunneling of the remaining localized charge carriers.…”

mentioning

confidence: 99%

“…Moreover, the current flow from the AFM tip to the bottom electrode leads to an ill-defined geometry. Thus, while the detected conductance variations of about one decade [4] or a factor of 4 [16] in ErMnO3 and of 25% in HoMnO3 [8] provide strong indications for different conductivities of domains and walls, no unequivocal information on the absolute value of the conductivity contrast is gathered. Recent photoemission electronmicroscopy experiments on ErMnO3 have demonstrated the intrinsic nature of the conductivity variation between domains and DWs [17] but this technique also does not provide absolute values.…”

mentioning

confidence: 99%

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Conductivity Contrast and Tunneling Charge Transport in the Vortexlike Ferroelectric Domain Patterns of Multiferroic Hexagonal YMnO3

et al. 2017

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We deduce the intrinsic conductivity properties of the ferroelectric domain walls around the topologically protected domain vortex cores in multiferroic YMnO3. This is achieved by performing a careful equivalent-circuit analysis of dielectric spectra measured in single-crystalline samples with different vortex densities. The conductivity contrast between the bulk domains and the less conducting domain boundaries is revealed to reach up to a factor 500 at room temperature, depending on sample preparation. Tunneling of localized defect charge carriers is the dominant charge-transport process in the domain walls that are depleted of mobile charge carriers. This work demonstrates that via equivalent-circuit analysis, dielectric spectroscopy can provide valuable information on the intrinsic charge-transport properties of ferroelectric domain walls, which is of high relevance for the design of new domain-wall-based microelectronic devices.The hexagonal manganites RMnO3 (R = Sc, Y, In, and Dy-Lu) form a unique group of multiferroics where a geometrically-driven mechanism triggers improper ferroelectricity [1]. Additional interest in this material class arose from the reported occurrence of vortex-like ferroelectric domain patterns [2,3,4]. Around the vortex cores, forming the centers of "cloverleaf" patterns of six domains, the polarization changes sign six times. These cores, evolving at a high-temperature structural transition [5], represent stable topological defects. Even strong electric fields only lead to a variation of ferroelectric domain sizes in these materials, but are unable to completely eradicate unfavorable domains and to generate a mono-domain state [2,6]. Moreover, there is a strict coupling of ferroelectric and antiferromagnetic domain walls (DWs), the latter forming at much lower temperatures around 100 K [7].Recently it was shown that these complex domain properties also may be of relevance from an application point of view: Conductive atomic-force microscopy (c-AFM) on ErMnO3 [4] and HoMnO3 [8] revealed that the conductance of the ferroelectric DWs is either enhanced or suppressed compared to the domains, being determined by the polarization orientation of the adjacent domains. As the DWs can be easily tuned by external fields, this opens the possibility of domain-boundary engineering and applications in microelectronics using the nanoscale DWs instead of the domains themselves as active device elements [9,10,11,12,13]. The hexagonal manganites seem especially suited for this kind of functionality: Their DWs are robust and represent persistent interfaces as they are attached to the vortex cores, but within these constraints they can be moved by an external field thus enabling switching [4,12,13].In general, insulating domain walls, also observed in various other systems as SrMnO3 thin films [14] and (Ca,Sr)3Ti2O7 [15], have shifted into the focus of interest, due to their possible applications, e.g., as rewritable nanocapacitors. The conductivity contrast between these DWs and the domains should be...

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Section: Non-intrinsic Relaxor Behaviormentioning

confidence: 99%

Section: Non-intrinsic Relaxor Behaviormentioning

confidence: 99%

“…Resolving this into real and imaginary part and calculating the capacitance via C'tot = G"tot/ leads to [16]:…”

Section: Non-intrinsic Relaxor Behaviormentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

Conductivity Contrast and Tunneling Charge Transport in the Vortexlike Ferroelectric Domain Patterns of Multiferroic Hexagonal YMnO3

et al. 2017

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Roadmap for Ferroelectric Domain Wall Nanoelectronics

Sharma

Moïse

Colombo

et al. 2021

Adv Funct Materials

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Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to electronic properties distinct from the bulk that can also be electrically programmed. These nanoscale features currently are being actively explored for the development of agile, low‐energy electronics for applications in memory, logic, and brain‐inspired neuromorphic computing. In this article, the authors review the state of the art, the latest developments, and outline key device and material challenges, emerging opportunities, and new directions for the accelerated engineering and commercialization of domain wall technology.

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The Third Dimension of Ferroelectric Domain Walls

et al. 2022

Self Cite

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Ferroelectric domain walls are quasi‐2D systems that show great promise for the development of nonvolatile memory, memristor technology, and electronic components with ultrasmall feature size. Electric fields, for example, can change the domain wall orientation relative to the spontaneous polarization and switch between resistive and conductive states, controlling the electrical current. Being embedded in a 3D material, however, the domain walls are not perfectly flat and can form networks, which leads to complex physical structures. In this work, the importance of the nanoscale structure for the emergent transport properties is demonstrated, studying electronic conduction in the 3D network of neutral and charged domain walls in ErMnO3. By combining tomographic microscopy techniques and finite element modeling, the contribution of domain walls within the bulk is clarified and the significance of curvature effects for the local conduction is shown down to the nanoscale. The findings provide insights into the propagation of electrical currents in domain wall networks, reveal additional degrees of freedom for their control, and provide quantitative guidelines for the design of domain‐wall‐based technology.

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Optimization of Electronic Domain‐Wall Properties by Aliovalent Cation Substitution

Cited by 37 publications

References 23 publications

Conductivity Contrast and Tunneling Charge Transport in the Vortexlike Ferroelectric Domain Patterns of Multiferroic Hexagonal YMnO3

Conductivity Contrast and Tunneling Charge Transport in the Vortexlike Ferroelectric Domain Patterns of Multiferroic Hexagonal YMnO3

Roadmap for Ferroelectric Domain Wall Nanoelectronics

The Third Dimension of Ferroelectric Domain Walls

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